Silicon integrated injection logic operating above 350 degrees C

In order to develop silicon ICs operating above 350 degrees C, an integrated injection logic (IlL) was chosen as an example. A novel structure for the IIL was designed through experimental and theoretical studies of pn junctions and transistors at high temperatures. The designed IIL was achieved by newly developed combined processes of ion implantation and low-temperature epitaxy. The developed IIL is fully operational from room temperature to 385 degrees C. The V/sub OH/ decreases with temperature at the rate of 1.8 mV/ degrees C and is about 215 mV at 370 degrees C. V/sub OL/ does the same at about 45 mV in a temperature range from 50 to 370 degrees C. The signal swing of a nine-stage ring oscillator is about 30 mV at 385 degrees C. The power delay product is 18 pJ/stage.<>