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International Electron Devices Meeting 1991 [Technical Digest]最新文献

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Channel length and width effects on NMOS transistor degradation under constant positive gate-voltage stressing 恒定正栅极电压应力下沟道长度和宽度对NMOS晶体管退化的影响
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235318
K. Wu, S. Pan, D. Chin, J. Shaw
{"title":"Channel length and width effects on NMOS transistor degradation under constant positive gate-voltage stressing","authors":"K. Wu, S. Pan, D. Chin, J. Shaw","doi":"10.1109/IEDM.1991.235318","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235318","url":null,"abstract":"It is pointed out that a reliable gate oxide is the most important component for MOS devices operating under a high gate voltage. Trapped charges and interface states are generated in the oxide under a high gate-voltage bias due to Fowler-Nordheim tunneling. The gate current, charge pumping current, and threshold voltage shift critically depend on the electric field across gate oxide. It is demonstrated that device degradation is a strong function of channel width to channel length ratio (W/L). Under the same stress condition, a higher W/L ratio leads to more severe degradation. This geometric effect is the result of nonuniform distribution of trapped charges and interface states. The densities of trapped charges and the interface states are highest near the source and drain regions and lowest along the isolation edges.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"19 1","pages":"735-738"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86684071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Advanced IC fabrication technology using reliable, small-size, and high-speed AlGaAs/GaAs HBTs 先进的集成电路制造技术，采用可靠，小尺寸，高速AlGaAs/GaAs HBTs
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235273
T. Nittono, K. Nagata, Y. Yamauchi, T. Makimura, H. Ito, O. Nakajima
{"title":"Advanced IC fabrication technology using reliable, small-size, and high-speed AlGaAs/GaAs HBTs","authors":"T. Nittono, K. Nagata, Y. Yamauchi, T. Makimura, H. Ito, O. Nakajima","doi":"10.1109/IEDM.1991.235273","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235273","url":null,"abstract":"Reliable, small-size, and high-speed AlGaAs/GaAs HBTs (heterojunction bipolar transistors) have been developed using a carbon-doped thin base layer and O/sup +/-implant E/B (emitter/base) junction isolation. This isolation reduces the recombination current at the implanted edge, resulting in improved current gain. The use of carbon dopant for the base layer improves device reliability. A thin (0.04 mu m) base reduces base transit time, making it possible to achieve a high cutoff frequency of 103 GHz. A one-by-eight static frequency divider and a one-by-four/one-by-five two-modulus prescaler fabricated to investigate circuit performance successfully operated over 10 GHz. The 1- mu m*2.4- mu m emitters used in the divider are the smallest HBT applied to ICs ever reported. This result indicates that the proposed technology is promising for the development of reliable and high-speed HBT ICs.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"36 1","pages":"931-934"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86773604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
A bulk silicon dissolved wafer process for microelectromechanical systems 一种用于微机电系统的大块硅溶解晶圆工艺
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235313
Y. Gianchandani, K. Najafi
{"title":"A bulk silicon dissolved wafer process for microelectromechanical systems","authors":"Y. Gianchandani, K. Najafi","doi":"10.1109/IEDM.1991.235313","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235313","url":null,"abstract":"The authors describe a single-sided bulk silicon dissolved wafer process that has been used to fabricate several different micromechanical devices. It involves the simultaneous processing of glass and silicon wafers, which are eventually bonded together electrostatically before being etched to leave heavily boron-doped devices attached to a glass substrate. The process requires a minimum of three masks: two for the silicon wafers to define the microstructures, and one for the glass wafers to define the interconnect and lead transfer to these devices. Overhanging features can be fabricated without any additional masking steps. The authors also describe the measurements of three kinds of laterally driven comb structures fabricated for application in a scanning thermal profilometer. They comprise shuttle masses supported by 200- mu m long beams, and mounted with probes that extend 250 mu m past the edge of the die. Devices with beam thicknesses of 3.7 mu m and 6.4 mu m yield measured resonant frequencies between 32 and 46 kHz, and peak-to-peak displacements exceeding 18 mu m.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"12 1","pages":"757-760"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88810949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 24
Experimental verification of the mechanism of hot-carrier-induced photon emission in n-MOSFET's with a CCD gate structure 具有CCD栅极结构的n-MOSFET热载子诱导光子发射机理的实验验证
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235410
Hon-Sum Wong
{"title":"Experimental verification of the mechanism of hot-carrier-induced photon emission in n-MOSFET's with a CCD gate structure","authors":"Hon-Sum Wong","doi":"10.1109/IEDM.1991.235410","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235410","url":null,"abstract":"New experimental data are presented to verify the physical mechanism of hot-carrier-induced photon emission in n-MOSFETs. The multiple gates are biased to create hot electron populations either at the drain junction or at the interelectrode gap regions by using MOSFETs with an overlapping CCD (charge coupled device). Results show that the magnitudes of the photon-generated minority carrier collected were comparable for hot-carrier-induced photons emitted from the drain junction and from the interelectrode gap regions, although the density of charged centers available for Bremsstrahlung for both situations differed by about two orders of magnitude. These results show unambiguously that Bremsstrahlung of hot electrons in the Coulomb field of ionized drain dopants is not the sole mechanism responsible for hot-carrier-induced photon emission in n-MOSFETs.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"14 1","pages":"549-552"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88829887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 29
A reverse base current under high level injection and its influence on BiCMOS circuit 高电平注入下的反向基极电流及其对BiCMOS电路的影响
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235288
K. Ishimaru, F. Matsuoka, T. Maeda, H. Satake, T. Fuse, M. Matsui, Y. Urakawa, H. Momose
{"title":"A reverse base current under high level injection and its influence on BiCMOS circuit","authors":"K. Ishimaru, F. Matsuoka, T. Maeda, H. Satake, T. Fuse, M. Matsui, Y. Urakawa, H. Momose","doi":"10.1109/IEDM.1991.235288","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235288","url":null,"abstract":"The base pushout induced reverse base current (I/sub RB/) at high level injection was observed and analyzed. A simple model to describe this phenomenon was also proposed. The I/sub RB/ is described universally by this model even if collector conditions are varied. The I/sub RB/ increases with decreasing device temperature and is suppressed by voltage drop at the external base region due to carrier freeze-out. This reverse base current causes failure on the BiCMOS circuit and gives a new limitation for applied power supply voltage.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"7 1","pages":"865-868"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83802413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical amplifiers-a telecommunications revolution 光放大器——一场电信革命
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235436
D. Payne, R. Laming
{"title":"Optical amplifiers-a telecommunications revolution","authors":"D. Payne, R. Laming","doi":"10.1109/IEDM.1991.235436","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235436","url":null,"abstract":"Advances in the field of optical amplifiers are briefly reviewed, with emphasis on the Er-doped fiber amplifier (EDFA). It is noted that the development of the EDFA worldwide has been astonishingly rapid. The noise performance is found to be virtually quantum-limited and this permits hundreds of amplifiers to be cascaded without significant degradation. The fiber transmission medium can thus be made effectively lossless and laboratory experiments to date have indicated that transoceanic distances can readily be traversed. Only four years after the invention of the EDFA, commercial EDFAs are now offered by more than 30 companies. The impact of the EDFA is being felt within a number of allied technologies, such as nonlinear optical fiber switching and routing, where the amplifier provides the ability to generate high-power pulses sufficient to access the nonlinear regime.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"79 1","pages":"3-4"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83916861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Extraction of the series resistances and effective channel length of GaAs MESFETs by means of electrical methods: a numerical study 用电学方法提取GaAs mesfet串联电阻和有效沟道长度的数值研究
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235383
R. Menozzi, L. Selmi, P. Gandolfi, B. Riccò
{"title":"Extraction of the series resistances and effective channel length of GaAs MESFETs by means of electrical methods: a numerical study","authors":"R. Menozzi, L. Selmi, P. Gandolfi, B. Riccò","doi":"10.1109/IEDM.1991.235383","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235383","url":null,"abstract":"The authors present a numerical study on electrical methods to measure the source and drain resistances and the effective channel length of state-of-the-art gallium arsenide MESFETs. In particular, the effects of scaling on the physical meaning and gate voltage dependence of the extracted values are investigated. Fringing effects at the gate edges are found to be responsible for a substantial bias dependence of the series resistances, and hence for possible inaccuracies of extraction procedures that overlook such phenomena. A novel extraction technique is also proposed to overcome in part the limitations of conventional approaches.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"5 1","pages":"341-344"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83164453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 3-D BPSG flow simulation with temperature and impurity concentration dependent viscosity model 基于温度和杂质浓度黏度模型的BPSG三维流动模拟
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235324
H. Umimoto, S. Odanaka, S. Imai
{"title":"A 3-D BPSG flow simulation with temperature and impurity concentration dependent viscosity model","authors":"H. Umimoto, S. Odanaka, S. Imai","doi":"10.1109/IEDM.1991.235324","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235324","url":null,"abstract":"A BPSG flow simulation with a newly developed viscosity model is described. The viscosity model allows a 3-D BPSG flow simulation in a wide range of flow temperature and impurity concentration in the BPSG. STM observation and 3-D BPSG flow simulation using this viscosity model reveal a significant difference in the flow behavior at 850 degrees C and at 900 degrees C. The temperature dependence of the 3-D BPSG flow behavior is clarified. It is found that the 3-D BPSG flow behavior is characterized by universal curves of the surface height using the viscosity model.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"12 2 1","pages":"709-712"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83189607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Relation between hot-carrier light emission and kink effect in poly-Si thin film transistors 多晶硅薄膜晶体管中热载子发光与扭结效应的关系
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235405
M. Koyanagi, H. Kurino, T. Hashimoto, H. Mori, K. Hata, Y. Hiruma, T. Fujimori, I. Wu, A. Lewis
{"title":"Relation between hot-carrier light emission and kink effect in poly-Si thin film transistors","authors":"M. Koyanagi, H. Kurino, T. Hashimoto, H. Mori, K. Hata, Y. Hiruma, T. Fujimori, I. Wu, A. Lewis","doi":"10.1109/IEDM.1991.235405","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235405","url":null,"abstract":"The kink effect in poly-Si TFTs (thin-film transistors) is evaluated by using a novel method based on kink current and hot carrier light emission measurements. It is revealed by examining the influence of the hydrogenation treatment on the kink current and measuring the temperature dependence of the kink current that the kink effect is significantly influenced by the grain boundary traps. Furthermore, it is found from the hot carrier light emission measurement that the energy distribution of hot carriers is not described by the Maxwell-Boltzmann distribution. The comparison between the kink current and the emitted light intensity suggests that both kink current and light emission basically originated from the hot carriers although the kink current characteristics are not always completely correlated with the light emission properties.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"9 1","pages":"571-574"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87225777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
High speed AlGaAs/GaAs complementary HBT technology realized by multiple MBE growth and merged processing 高速AlGaAs/GaAs互补HBT技术实现了多个MBE生长和合并处理
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235274
C. Farley, R.J. Anderson, R.B. Bernescut, R. Grant, M. Chang, K. Wang, R. Nubling, N. Sheng
{"title":"High speed AlGaAs/GaAs complementary HBT technology realized by multiple MBE growth and merged processing","authors":"C. Farley, R.J. Anderson, R.B. Bernescut, R. Grant, M. Chang, K. Wang, R. Nubling, N. Sheng","doi":"10.1109/IEDM.1991.235274","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235274","url":null,"abstract":"A high-performance monolithic Npn/Pnp complementary HBT (heterojunction bipolar transistor) technology involving multiple MBE (molecular beam epitaxy) growths has been developed. Many of the process steps have been merged to simplify concurrent fabrication of Npn and Pnp devices. Pnp devices exhibit f/sub T/=20 GHz and f/sub max/=19 GHz. Npn devices show f/sub T/=51 GHz and f/sub max/=60 GHz. These cutoff frequencies are 2 to 3 times values previously reported for monolithically integrated Npn and Pnp devices. For the first time, integrated circuits operating at microwave frequencies have been fabricated from both types of devices on the same wafer. Npn-based direct coupled feedback amplifiers (gain blocks) show a gain of 11 dB and a 3-dB bandwidth of 12 GHz. Pnp-based gain blocks show a gain of 8 dB and a 3-dB bandwidth of 6 GHz.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"28 1","pages":"927-930"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87339421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
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