K. Ishimaru, F. Matsuoka, T. Maeda, H. Satake, T. Fuse, M. Matsui, Y. Urakawa, H. Momose
{"title":"高电平注入下的反向基极电流及其对BiCMOS电路的影响","authors":"K. Ishimaru, F. Matsuoka, T. Maeda, H. Satake, T. Fuse, M. Matsui, Y. Urakawa, H. Momose","doi":"10.1109/IEDM.1991.235288","DOIUrl":null,"url":null,"abstract":"The base pushout induced reverse base current (I/sub RB/) at high level injection was observed and analyzed. A simple model to describe this phenomenon was also proposed. The I/sub RB/ is described universally by this model even if collector conditions are varied. The I/sub RB/ increases with decreasing device temperature and is suppressed by voltage drop at the external base region due to carrier freeze-out. This reverse base current causes failure on the BiCMOS circuit and gives a new limitation for applied power supply voltage.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"7 1","pages":"865-868"},"PeriodicalIF":0.0000,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A reverse base current under high level injection and its influence on BiCMOS circuit\",\"authors\":\"K. Ishimaru, F. Matsuoka, T. Maeda, H. Satake, T. Fuse, M. Matsui, Y. Urakawa, H. Momose\",\"doi\":\"10.1109/IEDM.1991.235288\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The base pushout induced reverse base current (I/sub RB/) at high level injection was observed and analyzed. A simple model to describe this phenomenon was also proposed. The I/sub RB/ is described universally by this model even if collector conditions are varied. The I/sub RB/ increases with decreasing device temperature and is suppressed by voltage drop at the external base region due to carrier freeze-out. This reverse base current causes failure on the BiCMOS circuit and gives a new limitation for applied power supply voltage.<<ETX>>\",\"PeriodicalId\":13885,\"journal\":{\"name\":\"International Electron Devices Meeting 1991 [Technical Digest]\",\"volume\":\"7 1\",\"pages\":\"865-868\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Electron Devices Meeting 1991 [Technical Digest]\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1991.235288\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting 1991 [Technical Digest]","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1991.235288","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A reverse base current under high level injection and its influence on BiCMOS circuit
The base pushout induced reverse base current (I/sub RB/) at high level injection was observed and analyzed. A simple model to describe this phenomenon was also proposed. The I/sub RB/ is described universally by this model even if collector conditions are varied. The I/sub RB/ increases with decreasing device temperature and is suppressed by voltage drop at the external base region due to carrier freeze-out. This reverse base current causes failure on the BiCMOS circuit and gives a new limitation for applied power supply voltage.<>
![International Electron Devices Meeting 1991 [Technical Digest]](/Content/css/sci/img/zetp.jpg)
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
