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International Electron Devices Meeting 1991 [Technical Digest]最新文献

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p/sup +/ polysilicon gate P-MOSFETs using BCl implantation 采用BCl注入的p/sup +/多晶硅栅p - mosfet
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235419
K. Oikawa, S. Ando, N. Ando, H. Horie, Y. Toda, T. Tanaka, S. Hijiya
{"title":"p/sup +/ polysilicon gate P-MOSFETs using BCl implantation","authors":"K. Oikawa, S. Ando, N. Ando, H. Horie, Y. Toda, T. Tanaka, S. Hijiya","doi":"10.1109/IEDM.1991.235419","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235419","url":null,"abstract":"Suppressing boron penetration through the gate oxide is necessary to give reliable p/sup +/ polysilicon gate P-MOSFETs which are expected to ease the short channel effect. Fluorine was automatically introduced in the gate oxide by BF/sub 2/ implantation and enhanced B diffusion. It is clearly demonstrated that chlorine does not enhance B diffusion. BCl implantation when fabricating p/sup +/ polysilicon gates makes it possible to fabricate quarter-micron gate length P-MOSFETs with pure oxide 4.5 nm thick.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"128 1","pages":"79-82"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90612401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
1000 h stable operation of AlGaAs/GaAs light emitting diodes on Si substrates AlGaAs/GaAs发光二极管在Si衬底上1000小时稳定工作
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235265
S. Yoshimi, N. Wada, C. Shao, K. Iwabu, S. Sakai
{"title":"1000 h stable operation of AlGaAs/GaAs light emitting diodes on Si substrates","authors":"S. Yoshimi, N. Wada, C. Shao, K. Iwabu, S. Sakai","doi":"10.1109/IEDM.1991.235265","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235265","url":null,"abstract":"Summary form only given. An AlGaAs/GaAs light emitting diode (LED) fabricated on Si substrate operated for more than 1000 h at room temperature without any significant degradation. An UCGAS (undercut GaAs on Si) structure has been used in the LED structure to reduce both the thermal stress and the dislocation density. An UCGAS LED does not show any significant degradation even after 1000 h of operation, while mesa-LED degrades quickly. This result demonstrates that reliable AlGaAs/GaAs light emitting devices can be fabricated on Si substrates.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"30 1","pages":"962-963"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87049588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
BiCMOS-has the promise been fulfilled? bicmos——承诺实现了吗?
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235380
A. Alvarez
{"title":"BiCMOS-has the promise been fulfilled?","authors":"A. Alvarez","doi":"10.1109/IEDM.1991.235380","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235380","url":null,"abstract":"The era of modern BiCMOS technology started in the early 1980s with the promise of significantly improving SRAM and logic (gate array) performance and greater integration of mixed-signal analog systems. The author investigates what has actually been realized seven years later. The fastest commercially available SRAMs in the world, ranging in densities from 1 K to 1 M, are BiCMOS. BiCMOS 100 K SOG arrays with 100-200 MHz capability can be purchased from various vendors. BiCMOS microprocessors are starting to emerge from the lab and into production. Analog BiCMOS capabilities are being exploited in applications such as mobile communication. It is concluded that, all in all, BiCMOS has ben demonstrated to provide CMOS power and densities at bipolar speeds. The author then tries to provide an answer to the question of why BiCMOS has not taken over. He concludes that, even though every major semiconductor company now boasts some form of BiCMOS technology, its relative process complexity keeps cost stubbornly high. It has also taken the circuit and system designers a full seven years to learn how to best exploit BiCMOS, and more must be learned.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"84 1","pages":"355-358"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90797407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
0.1- mu m-gate, ultrathin-film CMOS devices using SIMOX substrate with 80-nm-thick buried oxide layer 0.1 μ m栅极、超薄膜CMOS器件采用80纳米厚埋氧化层的SIMOX衬底
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235332
Y. Omura, S. Nakashima, K. Izumi, T. Ishii
{"title":"0.1- mu m-gate, ultrathin-film CMOS devices using SIMOX substrate with 80-nm-thick buried oxide layer","authors":"Y. Omura, S. Nakashima, K. Izumi, T. Ishii","doi":"10.1109/IEDM.1991.235332","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235332","url":null,"abstract":"A 0.1- mu m-gate CMOS/SIMOX (separation by implanted oxygen) has been successfully fabricated using high quality SIMOX substrates and an advanced design concept for the subquarter-micron region based on a simple device model. In addition, both 85-nm-gate n- and p-MOSFETs/SIMOX with 8-nm-thick silicon active layer have been realized. High parasitic resistance in the source and drain regions of the 0.1- mu m-gate CMOS/SIMOX tends to increase the propagation delay time. However, 0.1- mu m-gate CMOS/SIMOX devices with a delay time as low as 10 ps can be obtained by reducing the parasitic resistance.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"29 1","pages":"675-678"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91279170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 91
A physical lifetime prediction method for hot-carrier-stressed p-MOS transistors 热载流子应力p-MOS晶体管物理寿命预测方法
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235341
M. Brox, E. Wohlrab, W. Weber
{"title":"A physical lifetime prediction method for hot-carrier-stressed p-MOS transistors","authors":"M. Brox, E. Wohlrab, W. Weber","doi":"10.1109/IEDM.1991.235341","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235341","url":null,"abstract":"A recently developed model for the degradation of Si p-MOS transistors by hot-carrier injection is extended to take into account the detrapping of trapped electrons. Based on their approach, a more reliable and practicable lifetime prediction method for p-MOS transistors is established. A novel expression for the lifetime is derived which is valid in a wider range than the empirical power-law dependence of lifetime on gate current.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"51 1","pages":"525-528"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75353953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 37
Paradoxical boron profile broadening caused by implantation through a screen oxide layer 通过屏蔽氧化层注入引起的硼剖面反常展宽
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235422
C. Park, K. Klein, A. Tasch, R. Simonton, G. Lux
{"title":"Paradoxical boron profile broadening caused by implantation through a screen oxide layer","authors":"C. Park, K. Klein, A. Tasch, R. Simonton, G. Lux","doi":"10.1109/IEDM.1991.235422","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235422","url":null,"abstract":"The effects of an overlaying silicon dioxide layer on boron ion channeling and implant profile depths have been examined through analysis of experimentally measured profiles and the results of Monte Carlo simulations using the UT-MARLOWE code. Details of the randomizing effects of the oxide layer are presented, and a surprising anomaly is revealed: implantations through screen oxide layers can actually result in broader (deeper) profiles than similar implantations into bare silicon. The effectiveness of the screen oxide in randomizing the directions of implanted ions was found to be strongly dependent on the correlation between the ion energy and the oxide thickness. It has also been shown that even the total randomization of the directions of the ions does not completely eliminate ion channeling.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"58 1","pages":"67-70"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74951907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
A harmonic-balance-oriented modeling approach for microwave electron devices 面向谐波平衡的微波电子器件建模方法
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235382
F. Filicori, V. A. Monaco, G. Vannini
{"title":"A harmonic-balance-oriented modeling approach for microwave electron devices","authors":"F. Filicori, V. A. Monaco, G. Vannini","doi":"10.1109/IEDM.1991.235382","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235382","url":null,"abstract":"A technology-independent model of microwave electron devices, the Nonlinear Integral Model, is proposed. This model is rigorously derived from the Volterra series under mild assumptions valid for most types of electron devices and is particularly suitable for circuit analysis based on harmonic-balance techniques. Moreover, it makes it possible to compute the large-signal response of an electron device directly in terms of data obtained by physics-based numerical simulations. The validity of the model is confirmed both by simulation and by experimental results.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"46 1","pages":"345-348"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75592012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Development of a 250 kW, X-band, Accusweep magnetron 250千瓦x波段磁控管的研制
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235398
A. Johnson, W. Gerard, R. Washburn
{"title":"Development of a 250 kW, X-band, Accusweep magnetron","authors":"A. Johnson, W. Gerard, R. Washburn","doi":"10.1109/IEDM.1991.235398","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235398","url":null,"abstract":"The authors describe the results of an effort to develop a high-power, coaxial magnetron of unprecedented frequency agility capabilities and reliability. Specifically, the tube to be described-known as the VMX-1189B-operates over the 8.6-GHz to 9.6-GHz frequency range with a nominal output power of 250 kW. After a discussion of several high-reliability features which have been incorporated into the base magnetron itself, a detailed description of the Accusweep actuator is given, with attention to the many features which contribute to its superior performance and reliability. The characteristics of the VMX-1189B are also discussed.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"22 1","pages":"601-604"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73021684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Depth resolved carrier lifetime measurements of proton irradiated thyristors 质子辐照晶闸管的深度分辨载流子寿命测量
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235477
J. Linnros, P. Norlin, A. Hallén
{"title":"Depth resolved carrier lifetime measurements of proton irradiated thyristors","authors":"J. Linnros, P. Norlin, A. Hallén","doi":"10.1109/IEDM.1991.235477","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235477","url":null,"abstract":"Depth-resolved carrier lifetime profiles of proton-irradiated thyristors have been derived using a noncontact, optical pump/probe method. The results show that the depth distribution of recombination centra is sharply peaked at the ion range, although a significant tail extends towards the surface. Thus, the derived profiles exhibit an almost one-to-one correlation to the proton vacancy production rate. Furthermore, the lifetime in the tail scales inversely with ion fluence. Annealing studies, comparing the decrease in the rate of recombination at increasing temperature with deep level transient spectroscopy (DLTS) measurements, further support the notion that active recombination centra, produced by the proton irradiation, are mainly vacancy related. The annealing studies show that active recombination centra are relatively stable up to approximately 150 degrees C and only a 10-30% reduction occurs up to 300 degrees C.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"145 1","pages":"157-160"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72613114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A sub-half micron partially gate-to-drain overlapped MOSFET optimized for high performance and reliability 亚半微米部分栅漏重叠MOSFET，优化了高性能和可靠性
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235411
I. Chen, R. Chapman, C. Teng
{"title":"A sub-half micron partially gate-to-drain overlapped MOSFET optimized for high performance and reliability","authors":"I. Chen, R. Chapman, C. Teng","doi":"10.1109/IEDM.1991.235411","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235411","url":null,"abstract":"A partially gate-to-drain overlapped n-channel MOSFET using poly spacers was studied and compared to a fully overlapped and a conventional oxide spacer device in terms of performance and reliability. It is shown that, for a 500-AA partial overlap (flanked with 700-AA oxide spacer) device, the gate-to-drain overlap capacitance and simulated inverter delay are only 12% and 8%, respectively, higher than those of a conventional oxide spacer device. At a given performance level, the partial overlap device has two orders of magnitude longer DC hot-carrier lifetime than that of an oxide spacer device. The reason the overlapped device has high resistance to the hot-carrier stressing is the adverse oxide field at V/sub G/<V/sub D/ for the hot electrons to create damage under the spacer. The minimum gate-to-drain overlap distance maintaining the high reliability is roughly estimated to be around 200 to 300 AA for the current devices. The feasibility of selective removal of the poly spacers on p-channel and some layout-critical n-channel devices is demonstrated.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"1 1","pages":"545-548"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84580324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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