bicmos——承诺实现了吗?

A. Alvarez
{"title":"bicmos——承诺实现了吗?","authors":"A. Alvarez","doi":"10.1109/IEDM.1991.235380","DOIUrl":null,"url":null,"abstract":"The era of modern BiCMOS technology started in the early 1980s with the promise of significantly improving SRAM and logic (gate array) performance and greater integration of mixed-signal analog systems. The author investigates what has actually been realized seven years later. The fastest commercially available SRAMs in the world, ranging in densities from 1 K to 1 M, are BiCMOS. BiCMOS 100 K SOG arrays with 100-200 MHz capability can be purchased from various vendors. BiCMOS microprocessors are starting to emerge from the lab and into production. Analog BiCMOS capabilities are being exploited in applications such as mobile communication. It is concluded that, all in all, BiCMOS has ben demonstrated to provide CMOS power and densities at bipolar speeds. The author then tries to provide an answer to the question of why BiCMOS has not taken over. He concludes that, even though every major semiconductor company now boasts some form of BiCMOS technology, its relative process complexity keeps cost stubbornly high. It has also taken the circuit and system designers a full seven years to learn how to best exploit BiCMOS, and more must be learned.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"84 1","pages":"355-358"},"PeriodicalIF":0.0000,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"BiCMOS-has the promise been fulfilled?\",\"authors\":\"A. Alvarez\",\"doi\":\"10.1109/IEDM.1991.235380\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The era of modern BiCMOS technology started in the early 1980s with the promise of significantly improving SRAM and logic (gate array) performance and greater integration of mixed-signal analog systems. The author investigates what has actually been realized seven years later. The fastest commercially available SRAMs in the world, ranging in densities from 1 K to 1 M, are BiCMOS. BiCMOS 100 K SOG arrays with 100-200 MHz capability can be purchased from various vendors. BiCMOS microprocessors are starting to emerge from the lab and into production. Analog BiCMOS capabilities are being exploited in applications such as mobile communication. It is concluded that, all in all, BiCMOS has ben demonstrated to provide CMOS power and densities at bipolar speeds. The author then tries to provide an answer to the question of why BiCMOS has not taken over. He concludes that, even though every major semiconductor company now boasts some form of BiCMOS technology, its relative process complexity keeps cost stubbornly high. It has also taken the circuit and system designers a full seven years to learn how to best exploit BiCMOS, and more must be learned.<<ETX>>\",\"PeriodicalId\":13885,\"journal\":{\"name\":\"International Electron Devices Meeting 1991 [Technical Digest]\",\"volume\":\"84 1\",\"pages\":\"355-358\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Electron Devices Meeting 1991 [Technical Digest]\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1991.235380\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting 1991 [Technical Digest]","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1991.235380","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

摘要

现代BiCMOS技术的时代始于20世纪80年代初,有望显著提高SRAM和逻辑(门阵列)性能,并提高混合信号模拟系统的集成度。作者调查了七年后实际实现的情况。世界上最快的商用ram,密度范围从1k到1m,是BiCMOS。具有100-200 MHz能力的BiCMOS 100 K SOG阵列可以从各种供应商处购买。BiCMOS微处理器正开始从实验室走向生产。模拟BiCMOS功能正在移动通信等应用中得到开发。结论是,总而言之,BiCMOS已被证明可以在双极速度下提供CMOS功率和密度。然后,作者试图回答为什么BiCMOS没有接管这个问题。他的结论是,尽管现在每个主要的半导体公司都以某种形式的BiCMOS技术而自豪,但其相对的工艺复杂性使成本居高不下。电路和系统设计者也花了整整七年的时间来学习如何最好地利用BiCMOS,而且还需要学习更多。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
BiCMOS-has the promise been fulfilled?
The era of modern BiCMOS technology started in the early 1980s with the promise of significantly improving SRAM and logic (gate array) performance and greater integration of mixed-signal analog systems. The author investigates what has actually been realized seven years later. The fastest commercially available SRAMs in the world, ranging in densities from 1 K to 1 M, are BiCMOS. BiCMOS 100 K SOG arrays with 100-200 MHz capability can be purchased from various vendors. BiCMOS microprocessors are starting to emerge from the lab and into production. Analog BiCMOS capabilities are being exploited in applications such as mobile communication. It is concluded that, all in all, BiCMOS has ben demonstrated to provide CMOS power and densities at bipolar speeds. The author then tries to provide an answer to the question of why BiCMOS has not taken over. He concludes that, even though every major semiconductor company now boasts some form of BiCMOS technology, its relative process complexity keeps cost stubbornly high. It has also taken the circuit and system designers a full seven years to learn how to best exploit BiCMOS, and more must be learned.<>
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信