AlGaAs/GaAs发光二极管在Si衬底上1000小时稳定工作

International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI:10.1109/IEDM.1991.235265

S. Yoshimi, N. Wada, C. Shao, K. Iwabu, S. Sakai

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引用次数: 3

摘要

只提供摘要形式。在Si衬底上制备的AlGaAs/GaAs发光二极管(LED)在室温下工作超过1000小时而没有任何明显的降解。采用UCGAS (underched GaAs on Si)结构来降低LED的热应力和位错密度。UCGAS LED即使在工作1000小时后也不会出现任何明显的退化，而台面LED则会迅速退化。该结果表明，可以在Si衬底上制造可靠的AlGaAs/GaAs发光器件。

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1000 h stable operation of AlGaAs/GaAs light emitting diodes on Si substrates

Summary form only given. An AlGaAs/GaAs light emitting diode (LED) fabricated on Si substrate operated for more than 1000 h at room temperature without any significant degradation. An UCGAS (undercut GaAs on Si) structure has been used in the LED structure to reduce both the thermal stress and the dislocation density. An UCGAS LED does not show any significant degradation even after 1000 h of operation, while mesa-LED degrades quickly. This result demonstrates that reliable AlGaAs/GaAs light emitting devices can be fabricated on Si substrates.<>

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International Electron Devices Meeting 1991 [Technical Digest]

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