电子流不均匀导致栅极氧化物击穿机理的模拟研究

International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI:10.1109/IEDM.1991.235282

M. Kubota, K. Harafuji, A. Misaka, A. Yamano, H. Nakagawa, N. Nomura

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引用次数: 13

摘要

开发了一种新型等离子体加工模拟器，并将其应用于平行板氧RIE(反应离子蚀刻)(13.56 MHz)过程中栅极氧化损伤的分析。实验测量了多晶硅栅极nMOS电容器的时间介电击穿(TDDB)和平带电压位移。结果表明了一种新的机制，即在晶圆边缘附近的大电流引起损伤。

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Simulational study for gate oxide breakdown mechanism due to non-uniform electron current flow

A novel simulator for plasma processing has been developed and applied to analyze the gate oxide damage during parallel plate oxygen RIE (reactive ion etching) (13.56 MHz). The TDDB (time-dependent dielectric breakdown) and flat band voltage shift of a poly-silicon gate nMOS capacitor were experimentally measured. The results suggest a new mechanism where a large electron current flow near the wafer edge induces the damage.<>

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International Electron Devices Meeting 1991 [Technical Digest]

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