D. Ritter, R. Hamm, A. Feygenson, M. Panish, S. Chandrasekhar
{"title":"窄基InP/Ga/sub 0.47/ in /sub 0.53/As异质结双极晶体管的扩散基输运","authors":"D. Ritter, R. Hamm, A. Feygenson, M. Panish, S. Chandrasekhar","doi":"10.1109/IEDM.1991.235263","DOIUrl":null,"url":null,"abstract":"Summary form only given. The sub-picosecond transit times measured in InP/Ga/sub 0.47/In/sub 0.53/As heterojunction bipolar transistors (HBTs) were widely interpreted in terms of quasi-ballistic base transport. The ballistic transport mechanism, however, is ruled out by the results presented here, which indicate that the common emitter current gain of narrow base InP/Ga/sub 0.47/In/sub 0.53/As HBTs is inversely proportional to the square of the base width, as expected for diffusive base transport.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"1 1","pages":"967-969"},"PeriodicalIF":0.0000,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Diffusive base transport in narrow base InP/Ga/sub 0.47/In/sub 0.53/As heterojunction bipolar transistors\",\"authors\":\"D. Ritter, R. Hamm, A. Feygenson, M. Panish, S. Chandrasekhar\",\"doi\":\"10.1109/IEDM.1991.235263\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. The sub-picosecond transit times measured in InP/Ga/sub 0.47/In/sub 0.53/As heterojunction bipolar transistors (HBTs) were widely interpreted in terms of quasi-ballistic base transport. The ballistic transport mechanism, however, is ruled out by the results presented here, which indicate that the common emitter current gain of narrow base InP/Ga/sub 0.47/In/sub 0.53/As HBTs is inversely proportional to the square of the base width, as expected for diffusive base transport.<<ETX>>\",\"PeriodicalId\":13885,\"journal\":{\"name\":\"International Electron Devices Meeting 1991 [Technical Digest]\",\"volume\":\"1 1\",\"pages\":\"967-969\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Electron Devices Meeting 1991 [Technical Digest]\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1991.235263\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting 1991 [Technical Digest]","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1991.235263","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
摘要
只提供摘要形式。在InP/Ga/sub 0.47/ in /sub 0.53/As异质结双极晶体管(HBTs)中测量的亚皮秒传输时间被广泛地解释为准弹道基输运。然而，本文的结果排除了弹道输运机制，结果表明窄基极InP/Ga/sub 0.47/In/sub 0.53/As的共发射极电流增益与基极宽度的平方成反比，与扩散基极输运的预期一致
Diffusive base transport in narrow base InP/Ga/sub 0.47/In/sub 0.53/As heterojunction bipolar transistors
Summary form only given. The sub-picosecond transit times measured in InP/Ga/sub 0.47/In/sub 0.53/As heterojunction bipolar transistors (HBTs) were widely interpreted in terms of quasi-ballistic base transport. The ballistic transport mechanism, however, is ruled out by the results presented here, which indicate that the common emitter current gain of narrow base InP/Ga/sub 0.47/In/sub 0.53/As HBTs is inversely proportional to the square of the base width, as expected for diffusive base transport.<>
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