1040*1040元件PtSi肖特基垒红外图像传感器

International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI:10.1109/IEDM.1991.235473

N. Yutani, H. Yagi, M. Kimata, J. Nakanishi, S. Nagayoshi, N. Tubouchi

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引用次数: 23

摘要

研制了一种用于3-5 μ m红外波段热成像的高密度红外图像传感器。数组大小为1040*1040。探测器是一个硅化铂(PtSi)肖特基势垒二极管。该器件采用电荷扫描器件(CSD)结构，以实现大填充系数和高饱和水平。该器件的最小特征尺寸为1.5 μ m，尽管像素尺寸很小(17*17 μ m/sup 2/)，但填充系数却高达53%。通过增加探测器的存储容量，提高了饱和水平。获得了1.6*10/sup 6/电子的高饱和水平。在300 K / >时，f/1.2光学系统的噪声等效温差估计为0.10 K

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1040*1040 element PtSi Schottky-barrier IR image sensor

A high-density infrared image sensor has been developed for thermal imaging in the 3-5 mu m infrared band. The array size is 1040*1040. The detector is a platinum silicide (PtSi) Schottky-barrier diode. The charge sweep device (CSD) architecture is used for the device in order to realize a large fill factor and a high saturation level. The device is fabricated with a 1.5 mu m minimum feature size and has a large fill factor of 53% in spite of the small pixel size (17*17 mu m/sup 2/). The saturation level is improved by increasing the detector storage capacity. A high saturation level of 1.6*10/sup 6/ electrons is obtained. The noise equivalent temperature difference with f/1.2 optics is estimated as 0.10 K at 300 K.<>

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International Electron Devices Meeting 1991 [Technical Digest]

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