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International Electron Devices Meeting 1991 [Technical Digest]最新文献

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Narrow BF/sub 2/ implanted bases for 35 GHz/24 ps high-speed Si bipolar technology 35ghz / 24ps高速Si双极技术的窄BF/sub /植入基
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235356
K. Ehinger, E. Bertagnolli, J. Weng, R. Mahnkopf, R. Kopl, H. Klose
{"title":"Narrow BF/sub 2/ implanted bases for 35 GHz/24 ps high-speed Si bipolar technology","authors":"K. Ehinger, E. Bertagnolli, J. Weng, R. Mahnkopf, R. Kopl, H. Klose","doi":"10.1109/IEDM.1991.235356","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235356","url":null,"abstract":"The authors report on a high-speed Si bipolar self-aligned technology featuring deep trench isolation for low capacitances, a production-compatible 15-keV BF/sub 2/ base implantation for high cutoff frequency, and an advanced composite material spacer formation process which avoids any etch removal of the base profile allowing for perfect control of the base charge. This process results in extremely reproducible device characteristics. The authors fabricated transistors with measured cutoff frequencies in excess of 35 GHz and realized CML ring oscillators which achieved a minimum delay time of 24 ps/gate. To check for degradation effects arising from residues of fluorine due to BF/sub 2/ implantation they processed reference transistors with B bases implanted at effectively identical energies as the BF/sub 2/ devices. With respect to base/emitter breakdown characteristics, no significant difference between the two sets of samples was observed. Thus, it is concluded that a 15 keV BF/sub 2/ implantation for narrow base formation is a viable approach for realizing bipolar devices for high-speed ICs.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"22 1","pages":"459-462"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79369458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Quantum transport simulations of electron field emission 电子场发射的量子输运模拟
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235463
K. Jensen, A. Ganguly
{"title":"Quantum transport simulations of electron field emission","authors":"K. Jensen, A. Ganguly","doi":"10.1109/IEDM.1991.235463","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235463","url":null,"abstract":"The authors report on the comparison of various quantum transport calculations for metal-vacuum tunneling structures under high electric fields. Specifically, they compared the WKB approximation to the transmission coefficient (TC) for evaluating current-voltage relationships to the more accurate Airy function approach, and both of these approaches to the Wigner distribution function (WDF) approach to quantum transport. The purpose of this study is to examine electron transport through metal (or semiconductor)-vacuum interfaces and to assess the utility of various techniques for their incorporation into larger simulation packages, such as ensemble particle Monte Carlo. As the WDF has been used for the first time to study issues of interest to vacuum microelectronics, the authors assess its advantages and shortcomings.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"121 1","pages":"217-220"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79572347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A long-wavelength InGaAs/AlGaInAs MQW laser fabricated by Zn-diffusion induced disordering 用锌扩散诱导无序法制备长波InGaAs/AlGaInAs MQW激光器
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235394
F. Uesugi, K. Goto, S. Takahashi, H. Nishiguchi, T. Takiguchi, Y. Mihashi, E. Omura, T. Murotani, K. Ikeda
{"title":"A long-wavelength InGaAs/AlGaInAs MQW laser fabricated by Zn-diffusion induced disordering","authors":"F. Uesugi, K. Goto, S. Takahashi, H. Nishiguchi, T. Takiguchi, Y. Mihashi, E. Omura, T. Murotani, K. Ikeda","doi":"10.1109/IEDM.1991.235394","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235394","url":null,"abstract":"The authors have fabricated a long-wavelength InGaAs/AlGaInAs MQW (multiple quantum well) laser in which optical confinement and carrier confinement are produced by disordering of the MQW. Pulsed oscillation at room temperature has been attained in this disordered system. It is believed that the lattice matched disordering of the InGaAs/AlGaInAs MQW structure is a promising technique for realizing a long-wavelength planar-type laser structure and other optoelectronic devices such as OEICs (optoelectronic integrated circuits).<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"54 1","pages":"619-622"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84746138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Selective Al CVD on hydrogen-terminated Si surface 端氢硅表面选择性Al CVD
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235451
K. Tsubouchi, K. Masu, K. Sasaki, N. Mikoshiba
{"title":"Selective Al CVD on hydrogen-terminated Si surface","authors":"K. Tsubouchi, K. Masu, K. Sasaki, N. Mikoshiba","doi":"10.1109/IEDM.1991.235451","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235451","url":null,"abstract":"Filling deep-submicron via-holes is the most important key technology for multilevel metallization in the future ULSI. The authors discuss the selective deposition of high-quality Al by low-pressure chemical vapor deposition (CVD) using dimethylaluminum hydride (DMAH; (CH/sub 3/)/sub 2/AlH) and H/sub 2/. Deep-submicron via-holes of 0.3 mu m phi with an aspect ratio greater than 3 are completely filled by the selective deposition. For the selective growth mechanism, the authors propose a surface electrochemical reaction model, in which free electrons on the surface catalytically contribute to the reaction. A surface terminated-H atom on the Si surface reacts with the CH/sub 3/ radical in DMAH to produce volatile CH/sub 4/. The H atom of the DMAH remains on the newly deposited Al surface as a new terminated-H atom. The terminated-H atom on the surface reacts repeatedly with CH/sub 3/ radical to deposit Al.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"65 1","pages":"269-272"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90367456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Highly reliable 2.5 nm Ta/sub 2/O/sub 5/ capacitor process technology for 256 Mbit DRAMs 高可靠的2.5 nm Ta/sub 2/O/sub 5/电容器工艺技术，适用于256 Mbit dram
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235297
S. Kamiyama, T. Saeki, H. Mori, Y. Numasawa
{"title":"Highly reliable 2.5 nm Ta/sub 2/O/sub 5/ capacitor process technology for 256 Mbit DRAMs","authors":"S. Kamiyama, T. Saeki, H. Mori, Y. Numasawa","doi":"10.1109/IEDM.1991.235297","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235297","url":null,"abstract":"A recently developed capacitor process technology can fabricate highly reliable 2.5 nm equivalent thick Ta/sub 2/O/sub 5/ suitable for the cylindrical stacked capacitor of 256 Mb DRAMs. The capacitor process consists of RTN (rapid thermal nitridation) treatment of native SiO/sub 2/ on the cylindrical stacked polysilicon, RTA (rapid thermal annealing) treatment after Ta/sub 2/O/sub 5/ deposition, and the use of a TiN plate electrode formation on the Ta/sub 2/O/sub 5/ film, TDDB (time-dependent dielectric breakdown) tests showed that the 2.5 nm Ta/sub 2/O/sub 5/ capacitor reliability is as high as 10 years and more for 1/2V/sub cc/=1.0 V/100 degrees C operating conditions.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"21 1","pages":"827-830"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90427968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
A stacked capacitor with (Ba/sub x/Sr/sub 1-x/)TiO/sub 3/ for 256M DRAM 用于256M DRAM的(Ba/sub x/Sr/sub 1-x/)TiO/sub 3/堆叠电容
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235298
K. Koyama, T. Sakuma, S. Yamamichi, H. Watanabe, H. Aoki, S. Ohya, Y. Miyasaka, T. Kikkawa
{"title":"A stacked capacitor with (Ba/sub x/Sr/sub 1-x/)TiO/sub 3/ for 256M DRAM","authors":"K. Koyama, T. Sakuma, S. Yamamichi, H. Watanabe, H. Aoki, S. Ohya, Y. Miyasaka, T. Kikkawa","doi":"10.1109/IEDM.1991.235298","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235298","url":null,"abstract":"A high-dielectric-constant material was applied to a practical stacked DRAM capacitor. A large unit area capacitance (40 fF/ mu m/sup 2/) and a low leakage current (<10/sup -7/ A/cm/sup 2/) have been realized by the combination of a thin (Ba/sub x/Sr/sub 1-x/)TiO/sub 3/ film having an equivalent SiO/sub 2/ thickness of 8 AA and a Pt/Ta capacitor electrode. TDDB (time-dependent dielectric breakdown) measurements have indicated good reliability of this novel capacitor cell. These characteristics show that this storage capacitor is quite promising for 256M DRAM cells.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"57 1","pages":"823-826"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75845359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
High temperature operation (185 degrees C) of InGaAs/GaAs/InGaP quantum well lasers InGaAs/GaAs/InGaP量子阱激光器的高温工作(185℃)
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235395
Y. Chen, M. Wu, J. Kuo, M. Chin, A. Sergent
{"title":"High temperature operation (185 degrees C) of InGaAs/GaAs/InGaP quantum well lasers","authors":"Y. Chen, M. Wu, J. Kuo, M. Chin, A. Sergent","doi":"10.1109/IEDM.1991.235395","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235395","url":null,"abstract":"Aluminium-free InGaAs/GaAs/InGaP strained-layer quantum-well lasers have been grown on GaAs substrates by gas-source MBE (molecular beam epitaxy). High-temperature CW (continuous wave) operation of these (ridge waveguide lasers) has been demonstrated up to 185 degrees C, which is comparable to the best high-temperature laser performance in the strained-layer InGaAs/GaAs/AlGaAs quantum well lasers. Self-align index-guided lasers are also fabricated with gas-source MBE in two growth sequences. A threshold current of 12 mA is obtained from a 2.50- mu m-wide and 508- mu m-long self-aligned laser at room temperature under CW operation. This work demonstrates the regrowth capability of the gas source MBE technique to fabricate high-performance optoelectronic circuits and devices on the patterned aluminum-free InGaP layers.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"11 1","pages":"615-618"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88684421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electrical profiling of collector and base doping concentration 集电极和碱掺杂浓度的电谱分析
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235292
T. Chiu, J. Sung, J. Pavlo, T.-Y.M. Liu, K.F. Lee, W. Possanza, K. Moerschel
{"title":"Electrical profiling of collector and base doping concentration","authors":"T. Chiu, J. Sung, J. Pavlo, T.-Y.M. Liu, K.F. Lee, W. Possanza, K. Moerschel","doi":"10.1109/IEDM.1991.235292","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235292","url":null,"abstract":"A method for electrically profiling the collector carrier density of a bipolar device is reported. The base doping profile is also obtainable. This measurement technique is also useful in monitoring epi thickness and base width. The measurements are simple, economical, and accurate.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"18 6 1","pages":"849-852"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86819347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Switching behavior and current handling performance of MCT:IGBT cell ensembles MCT:IGBT单元集成的开关行为和电流处理性能
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235479
H. Lendenmann, H. Dettmer, W. Fichtner, B. J. Baliga, F. Bauer, T. Stockmeier
{"title":"Switching behavior and current handling performance of MCT:IGBT cell ensembles","authors":"H. Lendenmann, H. Dettmer, W. Fichtner, B. J. Baliga, F. Bauer, T. Stockmeier","doi":"10.1109/IEDM.1991.235479","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235479","url":null,"abstract":"The dynamic characteristics of large MCT (MOS controlled thyristor) ensembles have been improved by integrating IGBT (insulated-gated bipolar transistor) cells for turn-on and different schemes of cathode and anode shorting for turn-off. Such MCT-IGBT ensembles with integrated shorts are able to turn off 4 A (240 A-cm/sup -2/) at 1000 V in typically 1.5 mu s in the inductive clamped mode. The authors report on the effectiveness of these different approaches and their parasitic influence on the turn-on characteristic and the maximum turn-off current capability. The implementation of permanent cathode shorts has lead to an increase of the maximum turn-off current of large MCT ensembles, whereas anode shorting leads to faster turn-off and lower tail currents. A careful design of the IGBT turn-on cell and placement is required for proper MOS turn-on even at low anode voltages.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"92 1","pages":"149-152"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88445637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
MOCVD for PZT thin films by using novel metalorganic sources 利用新型金属有机源制备PZT薄膜的MOCVD
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235296
H. Itoh, K. Kashihara, T. Okudaira, K. Tsukamoto, Y. Akasaka
{"title":"MOCVD for PZT thin films by using novel metalorganic sources","authors":"H. Itoh, K. Kashihara, T. Okudaira, K. Tsukamoto, Y. Akasaka","doi":"10.1109/IEDM.1991.235296","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235296","url":null,"abstract":"The authors describe an MOCVD (metal-organic chemical vapor deposition) method for forming PZT thin films using novel metal-organic source materials. Bisdipivaloylmethanato lead, zirconium-t-butoxide, and titanium tetra-i-propoxide were used as source materials. PZT thin films were formed by the thermal oxidation of the vapor of these source materials with oxygen, at a temperature ranging from 600 to 700 degrees C under a reduced pressure ranging from 1 to 2 Torr. Perovskite structures with well-developed crystalline grains were obtained on Pt","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"54 1","pages":"831-834"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82104261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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