{"title":"高可靠的2.5 nm Ta/sub 2/O/sub 5/电容器工艺技术，适用于256 Mbit dram","authors":"S. Kamiyama, T. Saeki, H. Mori, Y. Numasawa","doi":"10.1109/IEDM.1991.235297","DOIUrl":null,"url":null,"abstract":"A recently developed capacitor process technology can fabricate highly reliable 2.5 nm equivalent thick Ta/sub 2/O/sub 5/ suitable for the cylindrical stacked capacitor of 256 Mb DRAMs. The capacitor process consists of RTN (rapid thermal nitridation) treatment of native SiO/sub 2/ on the cylindrical stacked polysilicon, RTA (rapid thermal annealing) treatment after Ta/sub 2/O/sub 5/ deposition, and the use of a TiN plate electrode formation on the Ta/sub 2/O/sub 5/ film, TDDB (time-dependent dielectric breakdown) tests showed that the 2.5 nm Ta/sub 2/O/sub 5/ capacitor reliability is as high as 10 years and more for 1/2V/sub cc/=1.0 V/100 degrees C operating conditions.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"21 1","pages":"827-830"},"PeriodicalIF":0.0000,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"Highly reliable 2.5 nm Ta/sub 2/O/sub 5/ capacitor process technology for 256 Mbit DRAMs\",\"authors\":\"S. Kamiyama, T. Saeki, H. Mori, Y. Numasawa\",\"doi\":\"10.1109/IEDM.1991.235297\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A recently developed capacitor process technology can fabricate highly reliable 2.5 nm equivalent thick Ta/sub 2/O/sub 5/ suitable for the cylindrical stacked capacitor of 256 Mb DRAMs. The capacitor process consists of RTN (rapid thermal nitridation) treatment of native SiO/sub 2/ on the cylindrical stacked polysilicon, RTA (rapid thermal annealing) treatment after Ta/sub 2/O/sub 5/ deposition, and the use of a TiN plate electrode formation on the Ta/sub 2/O/sub 5/ film, TDDB (time-dependent dielectric breakdown) tests showed that the 2.5 nm Ta/sub 2/O/sub 5/ capacitor reliability is as high as 10 years and more for 1/2V/sub cc/=1.0 V/100 degrees C operating conditions.<<ETX>>\",\"PeriodicalId\":13885,\"journal\":{\"name\":\"International Electron Devices Meeting 1991 [Technical Digest]\",\"volume\":\"21 1\",\"pages\":\"827-830\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Electron Devices Meeting 1991 [Technical Digest]\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1991.235297\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting 1991 [Technical Digest]","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1991.235297","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Highly reliable 2.5 nm Ta/sub 2/O/sub 5/ capacitor process technology for 256 Mbit DRAMs
A recently developed capacitor process technology can fabricate highly reliable 2.5 nm equivalent thick Ta/sub 2/O/sub 5/ suitable for the cylindrical stacked capacitor of 256 Mb DRAMs. The capacitor process consists of RTN (rapid thermal nitridation) treatment of native SiO/sub 2/ on the cylindrical stacked polysilicon, RTA (rapid thermal annealing) treatment after Ta/sub 2/O/sub 5/ deposition, and the use of a TiN plate electrode formation on the Ta/sub 2/O/sub 5/ film, TDDB (time-dependent dielectric breakdown) tests showed that the 2.5 nm Ta/sub 2/O/sub 5/ capacitor reliability is as high as 10 years and more for 1/2V/sub cc/=1.0 V/100 degrees C operating conditions.<>
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