T. Chiu, J. Sung, J. Pavlo, T.-Y.M. Liu, K.F. Lee, W. Possanza, K. Moerschel
{"title":"集电极和碱掺杂浓度的电谱分析","authors":"T. Chiu, J. Sung, J. Pavlo, T.-Y.M. Liu, K.F. Lee, W. Possanza, K. Moerschel","doi":"10.1109/IEDM.1991.235292","DOIUrl":null,"url":null,"abstract":"A method for electrically profiling the collector carrier density of a bipolar device is reported. The base doping profile is also obtainable. This measurement technique is also useful in monitoring epi thickness and base width. The measurements are simple, economical, and accurate.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"18 6 1","pages":"849-852"},"PeriodicalIF":0.0000,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Electrical profiling of collector and base doping concentration\",\"authors\":\"T. Chiu, J. Sung, J. Pavlo, T.-Y.M. Liu, K.F. Lee, W. Possanza, K. Moerschel\",\"doi\":\"10.1109/IEDM.1991.235292\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A method for electrically profiling the collector carrier density of a bipolar device is reported. The base doping profile is also obtainable. This measurement technique is also useful in monitoring epi thickness and base width. The measurements are simple, economical, and accurate.<<ETX>>\",\"PeriodicalId\":13885,\"journal\":{\"name\":\"International Electron Devices Meeting 1991 [Technical Digest]\",\"volume\":\"18 6 1\",\"pages\":\"849-852\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Electron Devices Meeting 1991 [Technical Digest]\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1991.235292\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting 1991 [Technical Digest]","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1991.235292","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical profiling of collector and base doping concentration
A method for electrically profiling the collector carrier density of a bipolar device is reported. The base doping profile is also obtainable. This measurement technique is also useful in monitoring epi thickness and base width. The measurements are simple, economical, and accurate.<>