利用新型金属有机源制备PZT薄膜的MOCVD

International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI:10.1109/IEDM.1991.235296

H. Itoh, K. Kashihara, T. Okudaira, K. Tsukamoto, Y. Akasaka

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引用次数: 7

摘要

介绍了一种金属有机化学气相沉积(MOCVD)方法，利用新型金属有机源材料制备PZT薄膜。以双二戊基甲烷铅、氧化锆和四异丙醇钛为原料。PZT薄膜是由这些源材料的蒸汽与氧气在600至700摄氏度的温度下在1至2托的减压下热氧化而形成的。在铂上获得了晶粒发育良好的钙钛矿结构

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MOCVD for PZT thin films by using novel metalorganic sources

The authors describe an MOCVD (metal-organic chemical vapor deposition) method for forming PZT thin films using novel metal-organic source materials. Bisdipivaloylmethanato lead, zirconium-t-butoxide, and titanium tetra-i-propoxide were used as source materials. PZT thin films were formed by the thermal oxidation of the vapor of these source materials with oxygen, at a temperature ranging from 600 to 700 degrees C under a reduced pressure ranging from 1 to 2 Torr. Perovskite structures with well-developed crystalline grains were obtained on Pt

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来源期刊

International Electron Devices Meeting 1991 [Technical Digest]

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