MOCVD for PZT thin films by using novel metalorganic sources

Abstract

The authors describe an MOCVD (metal-organic chemical vapor deposition) method for forming PZT thin films using novel metal-organic source materials. Bisdipivaloylmethanato lead, zirconium-t-butoxide, and titanium tetra-i-propoxide were used as source materials. PZT thin films were formed by the thermal oxidation of the vapor of these source materials with oxygen, at a temperature ranging from 600 to 700 degrees C under a reduced pressure ranging from 1 to 2 Torr. Perovskite structures with well-developed crystalline grains were obtained on Pt