用锌扩散诱导无序法制备长波InGaAs/AlGaInAs MQW激光器

International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI:10.1109/IEDM.1991.235394

F. Uesugi, K. Goto, S. Takahashi, H. Nishiguchi, T. Takiguchi, Y. Mihashi, E. Omura, T. Murotani, K. Ikeda

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引用次数: 0

摘要

作者制作了一种长波InGaAs/AlGaInAs多量子阱激光器，该激光器通过MQW的无序性产生光约束和载流子约束。该无序系统在室温下实现了脉冲振荡。相信的晶格匹配的无序化InGaAs / AlGaInAs发光结构是一种很有前途的技术,实现长波长planar-type激光器结构和其他光电设备等集成光电子集成电路。>

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A long-wavelength InGaAs/AlGaInAs MQW laser fabricated by Zn-diffusion induced disordering

The authors have fabricated a long-wavelength InGaAs/AlGaInAs MQW (multiple quantum well) laser in which optical confinement and carrier confinement are produced by disordering of the MQW. Pulsed oscillation at room temperature has been attained in this disordered system. It is believed that the lattice matched disordering of the InGaAs/AlGaInAs MQW structure is a promising technique for realizing a long-wavelength planar-type laser structure and other optoelectronic devices such as OEICs (optoelectronic integrated circuits).<>

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International Electron Devices Meeting 1991 [Technical Digest]

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