A long-wavelength InGaAs/AlGaInAs MQW laser fabricated by Zn-diffusion induced disordering

Abstract

The authors have fabricated a long-wavelength InGaAs/AlGaInAs MQW (multiple quantum well) laser in which optical confinement and carrier confinement are produced by disordering of the MQW. Pulsed oscillation at room temperature has been attained in this disordered system. It is believed that the lattice matched disordering of the InGaAs/AlGaInAs MQW structure is a promising technique for realizing a long-wavelength planar-type laser structure and other optoelectronic devices such as OEICs (optoelectronic integrated circuits).<>