K. Koyama, T. Sakuma, S. Yamamichi, H. Watanabe, H. Aoki, S. Ohya, Y. Miyasaka, T. Kikkawa
{"title":"用于256M DRAM的(Ba/sub x/Sr/sub 1-x/)TiO/sub 3/堆叠电容","authors":"K. Koyama, T. Sakuma, S. Yamamichi, H. Watanabe, H. Aoki, S. Ohya, Y. Miyasaka, T. Kikkawa","doi":"10.1109/IEDM.1991.235298","DOIUrl":null,"url":null,"abstract":"A high-dielectric-constant material was applied to a practical stacked DRAM capacitor. A large unit area capacitance (40 fF/ mu m/sup 2/) and a low leakage current (<10/sup -7/ A/cm/sup 2/) have been realized by the combination of a thin (Ba/sub x/Sr/sub 1-x/)TiO/sub 3/ film having an equivalent SiO/sub 2/ thickness of 8 AA and a Pt/Ta capacitor electrode. TDDB (time-dependent dielectric breakdown) measurements have indicated good reliability of this novel capacitor cell. These characteristics show that this storage capacitor is quite promising for 256M DRAM cells.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"57 1","pages":"823-826"},"PeriodicalIF":0.0000,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"A stacked capacitor with (Ba/sub x/Sr/sub 1-x/)TiO/sub 3/ for 256M DRAM\",\"authors\":\"K. Koyama, T. Sakuma, S. Yamamichi, H. Watanabe, H. Aoki, S. Ohya, Y. Miyasaka, T. Kikkawa\",\"doi\":\"10.1109/IEDM.1991.235298\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A high-dielectric-constant material was applied to a practical stacked DRAM capacitor. A large unit area capacitance (40 fF/ mu m/sup 2/) and a low leakage current (<10/sup -7/ A/cm/sup 2/) have been realized by the combination of a thin (Ba/sub x/Sr/sub 1-x/)TiO/sub 3/ film having an equivalent SiO/sub 2/ thickness of 8 AA and a Pt/Ta capacitor electrode. TDDB (time-dependent dielectric breakdown) measurements have indicated good reliability of this novel capacitor cell. These characteristics show that this storage capacitor is quite promising for 256M DRAM cells.<<ETX>>\",\"PeriodicalId\":13885,\"journal\":{\"name\":\"International Electron Devices Meeting 1991 [Technical Digest]\",\"volume\":\"57 1\",\"pages\":\"823-826\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Electron Devices Meeting 1991 [Technical Digest]\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1991.235298\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting 1991 [Technical Digest]","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1991.235298","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A stacked capacitor with (Ba/sub x/Sr/sub 1-x/)TiO/sub 3/ for 256M DRAM
A high-dielectric-constant material was applied to a practical stacked DRAM capacitor. A large unit area capacitance (40 fF/ mu m/sup 2/) and a low leakage current (<10/sup -7/ A/cm/sup 2/) have been realized by the combination of a thin (Ba/sub x/Sr/sub 1-x/)TiO/sub 3/ film having an equivalent SiO/sub 2/ thickness of 8 AA and a Pt/Ta capacitor electrode. TDDB (time-dependent dielectric breakdown) measurements have indicated good reliability of this novel capacitor cell. These characteristics show that this storage capacitor is quite promising for 256M DRAM cells.<>
![International Electron Devices Meeting 1991 [Technical Digest]](/Content/css/sci/img/zetp.jpg)
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
