2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs最新文献_第3页

Automotive 130 nm smart-power-technology including embedded flash functionality 汽车130纳米智能电源技术，包括嵌入式闪存功能

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs Pub Date : 2011-05-23 DOI: 10.1109/ISPSD.2011.5890780

R. Rudolf, C. Wagner, L. O'Riain, K. Gebhardt, B. Kuhn-Heinrich, B. von Ehrenwall, A. von Ehrenwall, M. Strasser, M. Stecher, U. Glaser, S. Aresu, P. Kuepper, A. Mayerhofer

引用次数: 40

A new vertical GaN SBD employing in-situ metallic gallium ohmic contact 一种采用原位金属镓欧姆接触的新型垂直GaN SBD

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs Pub Date : 2011-05-23 DOI: 10.1109/ISPSD.2011.5890837

Jiyong Lim, O. Seok, Young-shil Kim, M. Han, Minki Kim

引用次数: 3

Wide-voltage SOI-BiCDMOS technology for high-temperature automotive applications 用于高温汽车应用的宽电压SOI-BiCDMOS技术

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs Pub Date : 2011-05-23 DOI: 10.1109/ISPSD.2011.5890782

Hidemoto Tomita, H. Eguchi, Shinya Kijima, Norihiro Honda, Tetsuya Yamada, H. Yamawaki, H. Aoki, K. Hamada

引用次数: 29

The ESD failure mechanism of ultra-HV 700V LDMOS 超高压700V LDMOS ESD失效机理研究

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs Pub Date : 2011-05-23 DOI: 10.1109/ISPSD.2011.5890822

Jian-Hsing Lee, T. Kao, C. Chan, Jin-Lian Su, H. Su, Kuo-Cheng Chang

引用次数: 15

SiC power devices — Present status, applications and future perspective 碳化硅功率器件的现状、应用与展望

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs Pub Date : 2011-05-23 DOI: 10.1109/ISPSD.2011.5890778

M. Ostling, R. Ghandi, C. Zetterling

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引用次数: 187

1.7kV trench IGBT with deep and separate floating p-layer designed for low loss, low EMI noise, and high reliability 1.7kV沟槽IGBT，采用深层独立浮动p层设计，具有低损耗、低EMI噪声、高可靠性等特点

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs Pub Date : 2011-05-23 DOI: 10.1109/ISPSD.2011.5890787

So Watanabe, M. Mori, Taiga Arai, K. Ishibashi, Y. Toyoda, T. Oda, T. Harada, K. Saito

引用次数: 22

Prognostics of power MOSFET 功率MOSFET的预测

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs Pub Date : 2011-05-23 DOI: 10.1109/ISPSD.2011.5890815

J. Celaya, A. Saxena, S. Saha, V. Vashchenko, K. Goebel

引用次数: 48

Full understanding of hot-carrier-induced degradation in STI-based LDMOS transistors in the impact-ionization operating regime 充分理解冲击电离工作状态下sti基LDMOS晶体管的热载子诱导退化

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs Pub Date : 2011-05-23 DOI: 10.1109/ISPSD.2011.5890813

S. Poli, S. Reggiani, G. Baccarani, E. Gnani, A. Gnudi, M. Denison, S. Pendharkar, R. Wise

引用次数: 21

The radial layout design concept for the Bi-mode insulated gate transistor 双模绝缘栅晶体管的径向布局设计概念

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs Pub Date : 2011-05-23 DOI: 10.1109/ISPSD.2011.5890789

L. Storasta, Munaf T. A. Rahimo, M. Bellini, A. Kopta, U. Vemulapati, N. Kaminski

引用次数: 47

Integrated low power and high bandwidth optical isolator for monolithic power MOSFETs driver 用于单片功率mosfet驱动器的集成低功耗高带宽光隔离器

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs Pub Date : 2011-05-23 DOI: 10.1109/ISPSD.2011.5890864

N. Rouger, J. Crebier, O. Lesaint

引用次数: 14