R. Rudolf, C. Wagner, L. O'Riain, K. Gebhardt, B. Kuhn-Heinrich, B. von Ehrenwall, A. von Ehrenwall, M. Strasser, M. Stecher, U. Glaser, S. Aresu, P. Kuepper, A. Mayerhofer
{"title":"Automotive 130 nm smart-power-technology including embedded flash functionality","authors":"R. Rudolf, C. Wagner, L. O'Riain, K. Gebhardt, B. Kuhn-Heinrich, B. von Ehrenwall, A. von Ehrenwall, M. Strasser, M. Stecher, U. Glaser, S. Aresu, P. Kuepper, A. Mayerhofer","doi":"10.1109/ISPSD.2011.5890780","DOIUrl":null,"url":null,"abstract":"In this paper a 130 nm BCD technology platform is presented. The process offers logic-devices, flash-devices and high voltage devices with rated voltages up to 60 V. There are HV analog devices with variable channel length and HV power devices with low on-resistances. To ensure the safe operation of the power devices, a superior robustness against high energetic pulses of different length and repetitions could be achieved. The isolation of the different voltage stages is ensured by deep trenches and highly doped buried layers.","PeriodicalId":132504,"journal":{"name":"2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"40","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2011.5890780","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 40
Abstract
In this paper a 130 nm BCD technology platform is presented. The process offers logic-devices, flash-devices and high voltage devices with rated voltages up to 60 V. There are HV analog devices with variable channel length and HV power devices with low on-resistances. To ensure the safe operation of the power devices, a superior robustness against high energetic pulses of different length and repetitions could be achieved. The isolation of the different voltage stages is ensured by deep trenches and highly doped buried layers.