汽车130纳米智能电源技术，包括嵌入式闪存功能

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs Pub Date : 2011-05-23 DOI:10.1109/ISPSD.2011.5890780

R. Rudolf, C. Wagner, L. O'Riain, K. Gebhardt, B. Kuhn-Heinrich, B. von Ehrenwall, A. von Ehrenwall, M. Strasser, M. Stecher, U. Glaser, S. Aresu, P. Kuepper, A. Mayerhofer

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引用次数: 40

摘要

本文提出了一个130 nm的BCD技术平台。该工艺提供额定电压高达60v的逻辑器件、闪存器件和高压器件。有可变通道长度的高压模拟器件和低导通电阻的高压功率器件。为了保证功率器件的安全运行，需要对不同长度和重复的高能脉冲具有较强的鲁棒性。深沟槽和高掺杂埋层保证了不同电压级的隔离。

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Automotive 130 nm smart-power-technology including embedded flash functionality

In this paper a 130 nm BCD technology platform is presented. The process offers logic-devices, flash-devices and high voltage devices with rated voltages up to 60 V. There are HV analog devices with variable channel length and HV power devices with low on-resistances. To ensure the safe operation of the power devices, a superior robustness against high energetic pulses of different length and repetitions could be achieved. The isolation of the different voltage stages is ensured by deep trenches and highly doped buried layers.

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2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs

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