Jian-Hsing Lee, T. Kao, C. Chan, Jin-Lian Su, H. Su, Kuo-Cheng Chang
{"title":"超高压700V LDMOS ESD失效机理研究","authors":"Jian-Hsing Lee, T. Kao, C. Chan, Jin-Lian Su, H. Su, Kuo-Cheng Chang","doi":"10.1109/ISPSD.2011.5890822","DOIUrl":null,"url":null,"abstract":"A new kind of ESD failure mechanism is found in the UHV 700V LDNMOS during the HBM ESD zapping event. The device is damaged by its own charges and board stored charges, not damaged by the HBM stress current. The device junction capacitor and test-board capacitor store the charges from the ESD tester before the avalanche breakdown occurring. After the avalanche breakdown, the two capacitors discharge the stored charges to give the additional currents to stress the device. This phenomenon is called the charged-capacitor model (CCM) [1].","PeriodicalId":132504,"journal":{"name":"2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"The ESD failure mechanism of ultra-HV 700V LDMOS\",\"authors\":\"Jian-Hsing Lee, T. Kao, C. Chan, Jin-Lian Su, H. Su, Kuo-Cheng Chang\",\"doi\":\"10.1109/ISPSD.2011.5890822\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new kind of ESD failure mechanism is found in the UHV 700V LDNMOS during the HBM ESD zapping event. The device is damaged by its own charges and board stored charges, not damaged by the HBM stress current. The device junction capacitor and test-board capacitor store the charges from the ESD tester before the avalanche breakdown occurring. After the avalanche breakdown, the two capacitors discharge the stored charges to give the additional currents to stress the device. This phenomenon is called the charged-capacitor model (CCM) [1].\",\"PeriodicalId\":132504,\"journal\":{\"name\":\"2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2011.5890822\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2011.5890822","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new kind of ESD failure mechanism is found in the UHV 700V LDNMOS during the HBM ESD zapping event. The device is damaged by its own charges and board stored charges, not damaged by the HBM stress current. The device junction capacitor and test-board capacitor store the charges from the ESD tester before the avalanche breakdown occurring. After the avalanche breakdown, the two capacitors discharge the stored charges to give the additional currents to stress the device. This phenomenon is called the charged-capacitor model (CCM) [1].
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