1.7kV trench IGBT with deep and separate floating p-layer designed for low loss, low EMI noise, and high reliability

Abstract

A novel 1.7kV IGBT with deep floating-p layers separated from trench gates has been developed to realize low loss, low EMI noise, and high reliability. Separating floating-p layers from the trench gates reduces excess VGE overshoot, which results in a 51% smaller reverse recovery dVAK/dt than the conventional IGBT. The deep floating p-layers weaken the electric field under the trenches, which results in an avalanche breakdown voltage of 2250V. In addition, the Eon + Eoff for the proposed structure can be reduced by 47% more than that of the conventional one, maintaining a low VCE(sat) of 2.3V at 125°C.