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High-performance BiCMOS Si photonics platform 高性能BiCMOS Si光电子平台
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-12-03 DOI: 10.1109/BCTM.2015.7340583
D. Knoll, S. Lischke, A. Awny, M. Kroh, E. Krune, C. Mai, A. Peczek, D. Petousi, S. Simon, K. Voigt, G. Winzer, R. Barth, L. Zimmermann
{"title":"High-performance BiCMOS Si photonics platform","authors":"D. Knoll, S. Lischke, A. Awny, M. Kroh, E. Krune, C. Mai, A. Peczek, D. Petousi, S. Simon, K. Voigt, G. Winzer, R. Barth, L. Zimmermann","doi":"10.1109/BCTM.2015.7340583","DOIUrl":"https://doi.org/10.1109/BCTM.2015.7340583","url":null,"abstract":"Photonic BiCMOS is a novel technology for fabricating electronic-photonic integrated circuits. Broadband silicon photonics devices such as germanium photodiodes and depletion type Mach-Zehnder modulators were monolithically integrated in a high performance SiGe BiCMOS baseline process. Integration aspects and first examples of demonstrator circuits shall be reviewed.","PeriodicalId":126143,"journal":{"name":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","volume":"14 12","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120856713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
A broadband nonlinear lumped model for silicon IMPATT diodes 硅impat二极管的宽带非线性集总模型
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-12-03 DOI: 10.1109/BCTM.2015.7340580
Peyman Nazari, Hossein Mohammadnezhad, E. Preisler, P. Heydari
{"title":"A broadband nonlinear lumped model for silicon IMPATT diodes","authors":"Peyman Nazari, Hossein Mohammadnezhad, E. Preisler, P. Heydari","doi":"10.1109/BCTM.2015.7340580","DOIUrl":"https://doi.org/10.1109/BCTM.2015.7340580","url":null,"abstract":"A new circuit model based on time-domain characterization of Impact Ionization Avalanche Transit-Time (IMPATT) devices is proposed. The model introduces a new 3rd order low-pass filter to accurately model the delay response of carrier drift inside the drift region, thereby capturing the dispersion caused by carrier diffusion. Moreover, non-stationary effects inside avalanche region as well as the impact of avalanche length modulation on the displacement current are modeled through nonlinear avalanche capacitance.","PeriodicalId":126143,"journal":{"name":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","volume":"65 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114821051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A 24GHz signal generator with 30.8 dBm output power based on a power amplifier with 24.7 dBm output power and 31% PAE in SiGe 一个输出功率为30.8 dBm的24GHz信号发生器，基于输出功率为24.7 dBm的功率放大器，SiGe中PAE为31%
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-12-03 DOI: 10.1109/BCTM.2015.7340555
B. Welp, K. Noujeim, N. Pohl
{"title":"A 24GHz signal generator with 30.8 dBm output power based on a power amplifier with 24.7 dBm output power and 31% PAE in SiGe","authors":"B. Welp, K. Noujeim, N. Pohl","doi":"10.1109/BCTM.2015.7340555","DOIUrl":"https://doi.org/10.1109/BCTM.2015.7340555","url":null,"abstract":"High-frequency systems such as mm-wave radar transmitters and LO/RF chains in vector network analyzers (VNAs) often require the generation of signals with high output power. While these systems benefit considerably from the reduction in size and weight provided by SiGe integration, their output power must be further increased in order to meet the performance of other technologies (e.g. GaAs). To this end, a SiGe signal generator was developed that achieves 28.7 dBm peak output power with 21.9% of PAE and over 27.4 dBm of output power over its whole frequency range from 19.7 GHz to 28.2 GHz. The output power is scalable with DC current up to a maximum of 30.8 dBm with 17.6% PAE. It is based on a voltage controlled oscillator (VCO), power amplifier cells (PA cells) and lumped-element Wilkinson power combiners/dividers. Its phase noise is less than -94 dBc/Hz at 1MHz offset over the entire frequency range. The developed single PA cell achieves a maximum saturated output power Psat of 24.7 dBm with a peak PAE of 31%.","PeriodicalId":126143,"journal":{"name":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117304740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Millimeter-wave integrated circuits for wireless transceivers in BiCMOS technologies 用于BiCMOS技术无线收发器的毫米波集成电路
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-12-03 DOI: 10.1109/BCTM.2015.7340577
P. Heydari
{"title":"Millimeter-wave integrated circuits for wireless transceivers in BiCMOS technologies","authors":"P. Heydari","doi":"10.1109/BCTM.2015.7340577","DOIUrl":"https://doi.org/10.1109/BCTM.2015.7340577","url":null,"abstract":"This invited paper provides an overview of important attributes of a BiCMOS process in designing high-performance mm-wave integrated circuits, and contends, through several design examples, that it is perhaps one of the best process technologies for wireless applications that seek both high level of integration and high performance. In comparative study of BiCMOS performance compared to Silicon CMOS or III-V technologies, system-level considerations and circuit design issues will be illustrated. Several case studies including mm-wave integrated circuits designed and fabricated in BiCMOS processes will be introduced to provide experimental proof to these comparative studies.","PeriodicalId":126143,"journal":{"name":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","volume":"108 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127955200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 135–150 GHz frequency quadrupler with 0.5 dBm peak output power in 55 nm SiGe BiCMOS technology 采用55 nm SiGe BiCMOS技术的135-150 GHz频率四倍器，峰值输出功率为0.5 dBm
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-12-03 DOI: 10.1109/BCTM.2015.7340561
A. Bossuet, T. Quemerais, S. Lépilliet, J. Fournier, E. Lauga-Larroze, C. Gaquière, D. Gloria
{"title":"A 135–150 GHz frequency quadrupler with 0.5 dBm peak output power in 55 nm SiGe BiCMOS technology","authors":"A. Bossuet, T. Quemerais, S. Lépilliet, J. Fournier, E. Lauga-Larroze, C. Gaquière, D. Gloria","doi":"10.1109/BCTM.2015.7340561","DOIUrl":"https://doi.org/10.1109/BCTM.2015.7340561","url":null,"abstract":"A millimeter-wave frequency quadrupler implemented in BiCMOS 55 nm process from STMicroelectronics for in situ load-pull D band characterization is proposed. The circuit consists on cascaded doublers with intermediate power amplifiers to increase the output power. Two high-pass filters allow the rejection of the first and 2nd harmonics to obtain pure 4th harmonic output frequency. The measured peak output power is 0.5 dBm at 150 GHz with 14 GHz 3dB bandwidth and a DC power consumption of 0.63W. A good agreement between measurement and simulation results is observed.","PeriodicalId":126143,"journal":{"name":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125632435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Single-chip transmit-receive module with a fully integrated differential RF-MEMS antenna switch and a high-voltage generator for F-band radars 单芯片收发模块，具有完全集成的差分RF-MEMS天线开关和用于f波段雷达的高压发生器
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-12-03 DOI: 10.1109/BCTM.2015.7340564
V. Valenta, H. Schumacher, S. Wipf, M. Wietstruck, A. Goeritz, M. Kaynak, W. Winkler
{"title":"Single-chip transmit-receive module with a fully integrated differential RF-MEMS antenna switch and a high-voltage generator for F-band radars","authors":"V. Valenta, H. Schumacher, S. Wipf, M. Wietstruck, A. Goeritz, M. Kaynak, W. Winkler","doi":"10.1109/BCTM.2015.7340564","DOIUrl":"https://doi.org/10.1109/BCTM.2015.7340564","url":null,"abstract":"A single-chip solution for short-range F-band radar systems is presented. It is based on a Transmit-Receive (TR) module realized in a 130 nm BiCMOS process, with a fully integrated chain of Gilbert-cell frequency multipliers generating the required F-band carrier for both transmit and receive paths, a differential Single-Pole-Double-Throw (SPDT) switch that relies on novel differential RF Micro-Electro-Mechanical (RF-MEMS) switches and a High-Voltage (HV) generator providing the required charging and discharging 50 V signals for the RF-MEMS switches. Thanks to a dedicated compensation strategy, the radar module can be packaged using low-cost techniques and wire-bonded to an off-chip antenna without compromising the performance in the band of interest. To boost the link budget by 30 dB, dielectric lenses are used. Full functionality of the realized TR module has been experimentally confirmed, and characterizations of the SPDT switch components, such as RF-MEMS switch and balanced transmission lines were completed.","PeriodicalId":126143,"journal":{"name":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130117141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
0.18µm SiGe BiCMOS technology for fully-integrated front-end ICs capable of sub-300fs Ron × Coff switch performance 0.18µm SiGe BiCMOS技术，用于具有低于300fs Ron × Coff开关性能的全集成前端ic
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-12-03 DOI: 10.1109/BCTM.2015.7340562
K. Moen, E. Preisler, P. Hurwitz, Jieyin Zheng, W. McArthur, M. Racanelli
{"title":"0.18µm SiGe BiCMOS technology for fully-integrated front-end ICs capable of sub-300fs Ron × Coff switch performance","authors":"K. Moen, E. Preisler, P. Hurwitz, Jieyin Zheng, W. McArthur, M. Racanelli","doi":"10.1109/BCTM.2015.7340562","DOIUrl":"https://doi.org/10.1109/BCTM.2015.7340562","url":null,"abstract":"We introduce a 0.18μm SiGe BiCMOS technology that is designed for front-end IC (FEIC) integration on a single chip. This technology employs a high-resistivity substrate and offers high-performance RF switch and low-noise amplifier (LNA) devices alongside SiGe HBTs optimized for WiFi and cellular power amplifiers (PAs). An optional through-silicon via (TSV) is also available for a low-inductance ground connection. Data measured on transmission lines, NFET RF switch branches, NFET and SiGe NPN LNA devices, and SiGe NPN PA devices built in this technology is presented and discussed.","PeriodicalId":126143,"journal":{"name":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125499963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Nanoscale SiGe BiCMOS technologies: From 55 nm reality to 14 nm opportunities and challenges 纳米级SiGe BiCMOS技术:从55纳米现实到14纳米机遇与挑战
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-12-03 DOI: 10.1109/BCTM.2015.7340556
P. Chevalier, G. Avenier, E. Canderle, A. Montagne, G. Ribes, V. T. Vu
{"title":"Nanoscale SiGe BiCMOS technologies: From 55 nm reality to 14 nm opportunities and challenges","authors":"P. Chevalier, G. Avenier, E. Canderle, A. Montagne, G. Ribes, V. T. Vu","doi":"10.1109/BCTM.2015.7340556","DOIUrl":"https://doi.org/10.1109/BCTM.2015.7340556","url":null,"abstract":"This paper looks back to the development of highspeed BiCMOS technologies in STMicroelectronics for the past 15 years and discusses the perspectives for next generations through the CMOS angle. Opportunities and challenges of nanoscale BiCMOS technologies are reviewed and BiCMOS055 results are presented to demonstrate the feasibility at 55 nm node. Perspectives to offer FDSOI BiCMOS technologies at 28 nm or 14 nm nodes are analyzed too.","PeriodicalId":126143,"journal":{"name":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","volume":"84 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116700077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Calibration of 1D doping profiles of SiGe HBTs SiGe HBTs的一维掺杂谱校正
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-12-03 DOI: 10.1109/BCTM.2015.7340550
T. Rosenbaum, O. Saxod, V. T. Vu, D. Céli, P. Chevalier, M. Schroter, C. Maneux
{"title":"Calibration of 1D doping profiles of SiGe HBTs","authors":"T. Rosenbaum, O. Saxod, V. T. Vu, D. Céli, P. Chevalier, M. Schroter, C. Maneux","doi":"10.1109/BCTM.2015.7340550","DOIUrl":"https://doi.org/10.1109/BCTM.2015.7340550","url":null,"abstract":"Due to the miniaturization in microelectronics and corresponding steep doping profiles, it is increasingly difficult to obtain reliable results from SIMS measurements. This paper aims at providing a guideline for calculating unknown profile information by means of TCAD simulations using electrical reference data. The corresponding procedure has been applied to both measurements and synthetic TCAD reference data of SiGe HBTs. An extensive geometry scalable parameter extraction was performed for obtaining reliable measured reference data of the 1D transistor. The methodology modifies the doping of the space charge regions of a 1D transistor to the extracted area related BE and BC capacitances. To adjust the internal base doping profile, measured sheet resistance, zero-bias hole charge, and area related transit time are used as reference. Furthermore, the transfer current and the normalized transconductance are very sensitive to the shape of the Germanium profile and can serve as reference. The methodology was verified with TCAD data first and then applied to measurements.","PeriodicalId":126143,"journal":{"name":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131531619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Impact of emitter interface treatment on the horizontal current bipolar transistor (HCBT) characteristics and RF circuit performance 发射极接口处理对水平电流双极晶体管(HCBT)特性和射频电路性能的影响
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-12-03 DOI: 10.1109/BCTM.2015.7340572
J. Žilak, M. Koričić, T. Suligoj, H. Mochizuki, S. Morita
{"title":"Impact of emitter interface treatment on the horizontal current bipolar transistor (HCBT) characteristics and RF circuit performance","authors":"J. Žilak, M. Koričić, T. Suligoj, H. Mochizuki, S. Morita","doi":"10.1109/BCTM.2015.7340572","DOIUrl":"https://doi.org/10.1109/BCTM.2015.7340572","url":null,"abstract":"The impact of the HF cleaning step prior to the emitter α-Si deposition on the Horizontal Current Bipolar Transistor (HCBT) electrical characteristics is analyzed A longer HF dip results in a thinner emitter interface oxide implying a smaller emitter resistance (Re), which equals 85Ω for the unit HCBT as compared to 104 Ω for the unit HCBT with a shorter HF dip. The thinner oxide is still sufficiently thick to block the emitter α-Si etching and protect the intrinsic transistor structure. The impact of the emitter interface properties on the performance of designed high-linearity double-balanced active mixers is examined. The reduction of the emitter resistance results in 1.8 dB higher conversion gain and 2.4 dB lower IIP3 at 50 mA for the mixer without degeneration emitter resistor (RE). The effect of interface oxide thickness is shown to be negligible for RE>10 Ω. The HCBT mixers achieve maximum IIP3 of 23.8 dBm and conversion gain of 2.4 dB at the current of 50 mA.","PeriodicalId":126143,"journal":{"name":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123752021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
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