0.18µm SiGe BiCMOS technology for fully-integrated front-end ICs capable of sub-300fs Ron × Coff switch performance

Abstract

We introduce a 0.18μm SiGe BiCMOS technology that is designed for front-end IC (FEIC) integration on a single chip. This technology employs a high-resistivity substrate and offers high-performance RF switch and low-noise amplifier (LNA) devices alongside SiGe HBTs optimized for WiFi and cellular power amplifiers (PAs). An optional through-silicon via (TSV) is also available for a low-inductance ground connection. Data measured on transmission lines, NFET RF switch branches, NFET and SiGe NPN LNA devices, and SiGe NPN PA devices built in this technology is presented and discussed.