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2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM最新文献

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A low-power BiCMOS 50 Gbps Gm-boosted dual-feedback transimpedance amplifier 低功耗BiCMOS 50 Gbps gm增强双反馈跨阻放大器
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-10-01 DOI: 10.1109/BCTM.2015.7340578
Hossein Mohammadnezhad, Alireza Karimi Bidhendi, Michael M. Green, P. Heydari
{"title":"A low-power BiCMOS 50 Gbps Gm-boosted dual-feedback transimpedance amplifier","authors":"Hossein Mohammadnezhad, Alireza Karimi Bidhendi, Michael M. Green, P. Heydari","doi":"10.1109/BCTM.2015.7340578","DOIUrl":"https://doi.org/10.1109/BCTM.2015.7340578","url":null,"abstract":"A single-channel 50 Gbps transimpedance amplifier (TIA) in 130nm SiGe BiCMOS process is presented. The proposed TIA is comprised of a gm-boosted dual-feedback common-base, an RC-degenerated common-emitter and an inductively degenerated emitter-follower. Accounting for 100 fF photodiode's input capacitance, the TIA achieves a measured transimpedance gain of 41 dBÍÍ and a measured RMS input-referred current-noise spectral density of 35.4 pA/√Hz over a wide 3dB-bandwidth greater than 50 GHz. It achieves an open eye at 50 Gbps with an RMS jitter of 2.3 ps (including the jitter contribution of test fixture). The TIA chip occupies 1×0.575 mm2 (including pads) of die area and dissipates 24 mW from a 2 V supply voltage (i.e., less than 0.5 mW per 1 Gbps).","PeriodicalId":126143,"journal":{"name":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127703015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
QUBiC generation 9, a new BiCMOS process optimized for mmWave applications QUBiC第9代，一种针对毫米波应用优化的新型BiCMOS工艺
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-10-01 DOI: 10.1109/BCTM.2015.7340566
J. Melai, P. Magnée, I. Pouwel, P. Weijs, I. Brunets, R. van Dalen, A. Vohra, L. Tiemeijer, R. Pijper, H. Tuinhout, N. Wils, Nicolae Cazana
{"title":"QUBiC generation 9, a new BiCMOS process optimized for mmWave applications","authors":"J. Melai, P. Magnée, I. Pouwel, P. Weijs, I. Brunets, R. van Dalen, A. Vohra, L. Tiemeijer, R. Pijper, H. Tuinhout, N. Wils, Nicolae Cazana","doi":"10.1109/BCTM.2015.7340566","DOIUrl":"https://doi.org/10.1109/BCTM.2015.7340566","url":null,"abstract":"QUBiC generation 9 is NXPs new BiCMOS platform process for high performance RF applications in the mmWave domain. We introduced a new MIM capacitor option and paid special attention to improving the RF noise performance of the HBTs. The extrinsic base resistance has been decreased by several methods, most importantly by self-alignment of the extrinsic base connection to the emitter. The new process is robust and manufacturable and it results in improved noise performance without significantly adding to process complexity. We present results from a discrete transistor that is brought to market to replace GaAs pHEMTs for Ku band LNA applications. The second example is a prototype LNA for the Ka band, NFmin improves with 0.3 dB to 2.5 dB at 30 GHz.","PeriodicalId":126143,"journal":{"name":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130974167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Characterization of residual stress levels in complementary bipolar junction transistors on (100) silicon (100)硅互补双极结晶体管中残余应力水平的表征
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-10-01 DOI: 10.1109/BCTM.2015.7340582
R. Jaeger, S. Hussain, G. Niu, P. Gnanachchelvi, J. Suhling, B. Wilamowski, M. Hamilton
{"title":"Characterization of residual stress levels in complementary bipolar junction transistors on (100) silicon","authors":"R. Jaeger, S. Hussain, G. Niu, P. Gnanachchelvi, J. Suhling, B. Wilamowski, M. Hamilton","doi":"10.1109/BCTM.2015.7340582","DOIUrl":"https://doi.org/10.1109/BCTM.2015.7340582","url":null,"abstract":"Residual levels of stress remaining after device fabrication have been characterized in the base and emitter regions of shallow-trench-isolated complementary npn and pnp transistors on (100) silicon utilizing uniaxial stress measurements. A residual biaxial stress of approximately 160 MPa has been found in the active regions of the npn transistors, whereas negligible residual stress is observed in the corresponding pnp transistors.","PeriodicalId":126143,"journal":{"name":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","volume":"293 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115281667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A 92GHz bandwidth SiGe BiCMOS HBT TIA with less than 6dB noise figure 一种92GHz带宽SiGe BiCMOS HBT TIA，噪声系数小于6dB
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-10-01 DOI: 10.1109/BCTM.2015.7340554
K. Vasilakopoulos, S. Voinigescu, P. Schvan, P. Chevalier, A. Cathelin
{"title":"A 92GHz bandwidth SiGe BiCMOS HBT TIA with less than 6dB noise figure","authors":"K. Vasilakopoulos, S. Voinigescu, P. Schvan, P. Chevalier, A. Cathelin","doi":"10.1109/BCTM.2015.7340554","DOIUrl":"https://doi.org/10.1109/BCTM.2015.7340554","url":null,"abstract":"A low-noise, broadband amplifier with resistive degeneration and transimpedance feedback is reported with 200 mVpp input linearity and less than 6 dB noise figure up to 88 GHz. The measured gain of 13 dB, noise figure, linearity, and group delay variation of ±1.5 ps are in excellent agreement with simulation. Eye diagram measurements were conducted up to 120 Gb/s and a dynamic range larger than 36 dB was obtained from eye diagram measurements at 40 Gb/s. The chip, which includes a 50Ω output buffer, occupies 0.138 mm2 and consumes 21 mA from a 2.3V supply.","PeriodicalId":126143,"journal":{"name":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","volume":"143 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125770225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Prediction of the degradation of a hetero-junction bipolar transistor accompanied with aging simulation 异质结双极晶体管退化预测及老化模拟
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-10-01 DOI: 10.1109/BCTM.2015.7340567
Jonggook Kim, Jin Tang, M. Dahlstrom, K. Green
{"title":"Prediction of the degradation of a hetero-junction bipolar transistor accompanied with aging simulation","authors":"Jonggook Kim, Jin Tang, M. Dahlstrom, K. Green","doi":"10.1109/BCTM.2015.7340567","DOIUrl":"https://doi.org/10.1109/BCTM.2015.7340567","url":null,"abstract":"An empirical reliability model is proposed here that is able to predict parameter degradation for a SiGe Hetero-junction Bipolar Transistor (HBT) by scaling stress time laterally producing a universal curve that describes whole time evolution of degradation. The predictability of the degradation pattern is demonstrated in experiments at a forward active mode as well as the reverse Veb stress accounting for bias and current dependence of degradation. Furthermore, our model and methodology enables us to do an aging simulation at the circuit level.","PeriodicalId":126143,"journal":{"name":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125172711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Ku-band integrated building blocks for phased-array transmitter design in SiGe:C BiCMOS SiGe:C BiCMOS中相控阵发射机设计的ku波段集成构件
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-10-01 DOI: 10.1109/BCTM.2015.7340587
K. Ansari, C. Plett, P. Gamand
{"title":"Ku-band integrated building blocks for phased-array transmitter design in SiGe:C BiCMOS","authors":"K. Ansari, C. Plett, P. Gamand","doi":"10.1109/BCTM.2015.7340587","DOIUrl":"https://doi.org/10.1109/BCTM.2015.7340587","url":null,"abstract":"In this paper, the design methodology and layout considerations of a multiphase Rotary Travelling-Wave Voltage-Controlled Oscillator (RTW-VCO) and a high gain three-stage Power Amplifier (PA) for a phased-array transmitter application are presented. Using a 0.25 μm BiCMOS process, the fabricated VCO gives access to 8 different phases in steps of 45 degrees and it achieves a tuning range of 1 GHz for measured output power of -6.5 dBm at 17 GHz. The three-stage PA shows 25 dB of gain for 16-20 GHz of bandwidth, and it achieves saturated output power of 7.5 dBm.","PeriodicalId":126143,"journal":{"name":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131998317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
On the potential of using SiGe HBTs on SOI to support emerging applications up to 300°C 在SOI上使用SiGe hbt以支持高达300°C的新兴应用的潜力
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-10-01 DOI: 10.1109/BCTM.2015.7340571
Anup P. Omprakash, P. Chakraborty, Hanbin Ying, A. Cardoso, Adrian Ildefonso, J. Cressler
{"title":"On the potential of using SiGe HBTs on SOI to support emerging applications up to 300°C","authors":"Anup P. Omprakash, P. Chakraborty, Hanbin Ying, A. Cardoso, Adrian Ildefonso, J. Cressler","doi":"10.1109/BCTM.2015.7340571","DOIUrl":"https://doi.org/10.1109/BCTM.2015.7340571","url":null,"abstract":"For the first time, the high temperature (to 300°C) DC and AC performance of a > 100 GHz f<sub>T</sub>/f<sub>max</sub> SiGe HBTs on thick-film SOI are investigated for their potential use in emerging energy sector, automotive, and aerospace applications. Metrics such as current gain (β<sub>F</sub>), BV<sub>CEO</sub>, M-1, f<sub>T</sub>, f<sub>max</sub> are extracted from 24°C to 300°C and compared with a bulk SiGe HBT platform. The results demonstrate that while there are degradation to key device metrics at high temperatures, the devices are still usable over a wide temperature range. Additionally, while SOI is known for its high thermal resistance, it is demonstrated that the device is constrained by electrical effects rather than thermal effects at higher temperatures, which should therefore yield acceptable reliability.","PeriodicalId":126143,"journal":{"name":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123852150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Filling the terahertz gap with sand: High-power terahertz radiators in silicon 用沙子填补太赫兹间隙:硅中的高功率太赫兹散热器
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-10-01 DOI: 10.1109/BCTM.2015.7340574
R. Han, E. Afshari
{"title":"Filling the terahertz gap with sand: High-power terahertz radiators in silicon","authors":"R. Han, E. Afshari","doi":"10.1109/BCTM.2015.7340574","DOIUrl":"https://doi.org/10.1109/BCTM.2015.7340574","url":null,"abstract":"This paper reviews our recent work on Si and SiGe THz sources that generate high-power coherent radiation. Our design approach blends the optimization of device operation near or above fmax with unconventional circuit topologies and energy-efficient electromagnetic structures. Using a 130-nm SiGe HBT process (fmax=3D280 GHz), our 320-GHz transmitter produces a record radiated power (3.3 mW) and DC-to-THz radiation efficiency (0.54%) among all THz signal sources in silicon. This transmitter also demonstrates fully-integrated phase-locking capability for THz radiators for the first time. In this paper, a 260-GHz pulse radiator and a 340-GHz phased array, which are based on a 65-nm bulk CMOS process, are also presented. The former generates a radiated power of 1.1 mW, and provides THz pulses with 25-GHz bandwidth. The latter generates a radiated power of 0.8 mW and has a 50° beam-steering capability. These works demonstrate a promising roadmap towards future THz microsystems using silicon integrated-circuit technologies.","PeriodicalId":126143,"journal":{"name":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125667926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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