J. Melai, P. Magnée, I. Pouwel, P. Weijs, I. Brunets, R. van Dalen, A. Vohra, L. Tiemeijer, R. Pijper, H. Tuinhout, N. Wils, Nicolae Cazana
{"title":"QUBiC第9代,一种针对毫米波应用优化的新型BiCMOS工艺","authors":"J. Melai, P. Magnée, I. Pouwel, P. Weijs, I. Brunets, R. van Dalen, A. Vohra, L. Tiemeijer, R. Pijper, H. Tuinhout, N. Wils, Nicolae Cazana","doi":"10.1109/BCTM.2015.7340566","DOIUrl":null,"url":null,"abstract":"QUBiC generation 9 is NXPs new BiCMOS platform process for high performance RF applications in the mmWave domain. We introduced a new MIM capacitor option and paid special attention to improving the RF noise performance of the HBTs. The extrinsic base resistance has been decreased by several methods, most importantly by self-alignment of the extrinsic base connection to the emitter. The new process is robust and manufacturable and it results in improved noise performance without significantly adding to process complexity. We present results from a discrete transistor that is brought to market to replace GaAs pHEMTs for Ku band LNA applications. The second example is a prototype LNA for the Ka band, NFmin improves with 0.3 dB to 2.5 dB at 30 GHz.","PeriodicalId":126143,"journal":{"name":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"QUBiC generation 9, a new BiCMOS process optimized for mmWave applications\",\"authors\":\"J. Melai, P. Magnée, I. Pouwel, P. Weijs, I. Brunets, R. van Dalen, A. Vohra, L. Tiemeijer, R. Pijper, H. Tuinhout, N. Wils, Nicolae Cazana\",\"doi\":\"10.1109/BCTM.2015.7340566\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"QUBiC generation 9 is NXPs new BiCMOS platform process for high performance RF applications in the mmWave domain. We introduced a new MIM capacitor option and paid special attention to improving the RF noise performance of the HBTs. The extrinsic base resistance has been decreased by several methods, most importantly by self-alignment of the extrinsic base connection to the emitter. The new process is robust and manufacturable and it results in improved noise performance without significantly adding to process complexity. We present results from a discrete transistor that is brought to market to replace GaAs pHEMTs for Ku band LNA applications. The second example is a prototype LNA for the Ka band, NFmin improves with 0.3 dB to 2.5 dB at 30 GHz.\",\"PeriodicalId\":126143,\"journal\":{\"name\":\"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCTM.2015.7340566\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCTM.2015.7340566","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
QUBiC generation 9, a new BiCMOS process optimized for mmWave applications
QUBiC generation 9 is NXPs new BiCMOS platform process for high performance RF applications in the mmWave domain. We introduced a new MIM capacitor option and paid special attention to improving the RF noise performance of the HBTs. The extrinsic base resistance has been decreased by several methods, most importantly by self-alignment of the extrinsic base connection to the emitter. The new process is robust and manufacturable and it results in improved noise performance without significantly adding to process complexity. We present results from a discrete transistor that is brought to market to replace GaAs pHEMTs for Ku band LNA applications. The second example is a prototype LNA for the Ka band, NFmin improves with 0.3 dB to 2.5 dB at 30 GHz.