QUBiC第9代,一种针对毫米波应用优化的新型BiCMOS工艺

J. Melai, P. Magnée, I. Pouwel, P. Weijs, I. Brunets, R. van Dalen, A. Vohra, L. Tiemeijer, R. Pijper, H. Tuinhout, N. Wils, Nicolae Cazana
{"title":"QUBiC第9代,一种针对毫米波应用优化的新型BiCMOS工艺","authors":"J. Melai, P. Magnée, I. Pouwel, P. Weijs, I. Brunets, R. van Dalen, A. Vohra, L. Tiemeijer, R. Pijper, H. Tuinhout, N. Wils, Nicolae Cazana","doi":"10.1109/BCTM.2015.7340566","DOIUrl":null,"url":null,"abstract":"QUBiC generation 9 is NXPs new BiCMOS platform process for high performance RF applications in the mmWave domain. We introduced a new MIM capacitor option and paid special attention to improving the RF noise performance of the HBTs. The extrinsic base resistance has been decreased by several methods, most importantly by self-alignment of the extrinsic base connection to the emitter. The new process is robust and manufacturable and it results in improved noise performance without significantly adding to process complexity. We present results from a discrete transistor that is brought to market to replace GaAs pHEMTs for Ku band LNA applications. The second example is a prototype LNA for the Ka band, NFmin improves with 0.3 dB to 2.5 dB at 30 GHz.","PeriodicalId":126143,"journal":{"name":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"QUBiC generation 9, a new BiCMOS process optimized for mmWave applications\",\"authors\":\"J. Melai, P. Magnée, I. Pouwel, P. Weijs, I. Brunets, R. van Dalen, A. Vohra, L. Tiemeijer, R. Pijper, H. Tuinhout, N. Wils, Nicolae Cazana\",\"doi\":\"10.1109/BCTM.2015.7340566\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"QUBiC generation 9 is NXPs new BiCMOS platform process for high performance RF applications in the mmWave domain. We introduced a new MIM capacitor option and paid special attention to improving the RF noise performance of the HBTs. The extrinsic base resistance has been decreased by several methods, most importantly by self-alignment of the extrinsic base connection to the emitter. The new process is robust and manufacturable and it results in improved noise performance without significantly adding to process complexity. We present results from a discrete transistor that is brought to market to replace GaAs pHEMTs for Ku band LNA applications. The second example is a prototype LNA for the Ka band, NFmin improves with 0.3 dB to 2.5 dB at 30 GHz.\",\"PeriodicalId\":126143,\"journal\":{\"name\":\"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCTM.2015.7340566\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCTM.2015.7340566","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

QUBiC第9代是恩智浦新的BiCMOS平台工艺,用于毫米波领域的高性能射频应用。我们引入了一种新的MIM电容选项,并特别注意改善hbt的射频噪声性能。通过几种方法降低了外部基极电阻,最重要的是将外部基极连接自对准发射极。新工艺具有鲁棒性和可制造性,并且在不显著增加工艺复杂性的情况下改善了噪声性能。我们介绍了一种分立晶体管的结果,该晶体管被推向市场,以取代用于Ku波段LNA应用的GaAs phemt。第二个例子是Ka频段的原型LNA, NFmin在30 GHz时从0.3 dB提高到2.5 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
QUBiC generation 9, a new BiCMOS process optimized for mmWave applications
QUBiC generation 9 is NXPs new BiCMOS platform process for high performance RF applications in the mmWave domain. We introduced a new MIM capacitor option and paid special attention to improving the RF noise performance of the HBTs. The extrinsic base resistance has been decreased by several methods, most importantly by self-alignment of the extrinsic base connection to the emitter. The new process is robust and manufacturable and it results in improved noise performance without significantly adding to process complexity. We present results from a discrete transistor that is brought to market to replace GaAs pHEMTs for Ku band LNA applications. The second example is a prototype LNA for the Ka band, NFmin improves with 0.3 dB to 2.5 dB at 30 GHz.
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