2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM最新文献_第3页

A 47–217 GHz dynamic frequency divider in SiGe technology SiGe技术中的47 - 217ghz动态分频器

2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-12-03 DOI: 10.1109/BCTM.2015.7340570

Jidan Al-Eryani, H. Knapp, Hao Li, K. Aufinger, J. Wursthorn, S. Majied, L. Maurer

引用次数: 9

Impact study of the process thermal budget of advanced CMOS nodes on SiGe HBT performance 先进CMOS节点制程热收支对SiGe HBT性能的影响研究

2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-12-03 DOI: 10.1109/BCTM.2015.7340558

V. T. Vu, T. Rosenbaum, O. Saxod, D. Céli, T. Zimmer, S. Frégonèse, P. Chevalier

引用次数: 6

A Ka-band 2×2 true-time-delay phased array receiver 一种ka波段2×2真时延相控阵接收机

2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-12-03 DOI: 10.1109/BCTM.2015.7340552

Q. Ma, D. Leenaerts

引用次数: 4

Dual-band quad-core transformer coupled VCO with phase noise optimization 带相位噪声优化的双频四芯变压器耦合压控振荡器

2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-12-03 DOI: 10.1109/BCTM.2015.7340579

Rong Jiang, F. Dai, Feng Zhao, G. Niu, M. Hamilton, Jun Fu, Wei Zhou, Yudong Wang

引用次数: 1

Optimizing the vertical profile of SiGe HBTs to mitigate radiation-induced upsets 优化SiGe HBTs的垂直剖面，以减轻辐射引起的扰动

2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-12-03 DOI: 10.1109/BCTM.2015.7340576

Zachary E. Fleetwood, Brian R. Wier, U. Raghunathan, N. Lourenco, Michael A. Oakley, A. Joseph, J. Cressler

引用次数: 4

A 105-GHz, supply-scaled distributed amplifier in 90-nm SiGe BiCMOS 基于90nm SiGe BiCMOS的105 ghz电源级分布式放大器

2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-12-03 DOI: 10.1109/BCTM.2015.7340559

Kelvin Fang, Cooper S. Levy, J. Buckwalter

引用次数: 4

Experimental and theoretical study of fT for SiGe HBTs with a scaled vertical doping profile 纵向掺杂比例分布SiGe HBTs的傅立叶跃迁实验与理论研究

2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-10-01 DOI: 10.1109/BCTM.2015.7340586

J. Korn, H. Rucker, B. Heinemann, A. Pawlak, G. Wedel, M. Schroter

引用次数: 16

A monolithically integrated opto-electronic clock converter in photonic SiGe-BiCMOS technology 光子SiGe-BiCMOS技术中的单片集成光电时钟转换器

2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-10-01 DOI: 10.1109/BCTM.2015.7340585

B. Krueger, R. Makon, O. Landolt, E. Krune, D. Knoll, S. Lischke, J. Schulze

引用次数: 4

A 5 × 11.3 Gbit/s MZM driver array with a 6 Vpp output voltage swing and a chip-to-chip bondwire interface in SiGe bipolar technology 5 × 11.3 Gbit/s MZM驱动阵列，输出电压摆幅为6 Vpp，采用SiGe双极技术，采用片对片结合线接口

2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-10-01 DOI: 10.1109/BCTM.2015.7340565

H. Hettrich, M. Moller

引用次数: 3

Efficient modeling of static self-heating and thermal-coupling in multi-finger SiGe HBTs 多指SiGe HBTs静态自热和热耦合的高效建模

2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-10-01 DOI: 10.1109/BCTM.2015.7340557

S. Balanethiram, A. Chakravorty, R. D’Esposito, S. Frégonèse, T. Zimmer

{"title":"Efficient modeling of static self-heating and thermal-coupling in multi-finger SiGe HBTs","authors":"S. Balanethiram, A. Chakravorty, R. D’Esposito, S. Frégonèse, T. Zimmer","doi":"10.1109/BCTM.2015.7340557","DOIUrl":"https://doi.org/10.1109/BCTM.2015.7340557","url":null,"abstract":"A computationally efficient model for static self-heating and thermal coupling in a multi-finger bipolar transistor is proposed. Compared to an existing state-of-the-art model, our model differs only in the implementation strategy keeping the physical basis intact. The formulated model is implemented in Verilog-A without using any voltage controlled voltage sources. Temperature dependence of the thermal resistances are considered within the framework of the model. The number of extra nodes in our model reduces to 2n from n2 required in the state-of-the-art model with n as the number of emitter fingers in a transistor. The simulation results of our model are found to be identical with those of the state-of-the-art model demonstrating the capability of accurately considering the static self-heating and thermal coupling in a simple way. The model is found to accurately predict the measured data of a five-finger transistor. It is found that in high current operating regimes, our five finger transistor model simulates around 11% faster compared with the state-of-the-art model.","PeriodicalId":126143,"journal":{"name":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127838213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7