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2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM最新文献

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SiGe HBT and BiCMOS process integration optimization within the DOTSEVEN project 在DOTSEVEN项目中进行HBT和BiCMOS工艺集成优化
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-12-03 DOI: 10.1109/BCTM.2015.7340549
J. Bock, K. Aufinger, S. Boguth, C. Dahl, H. Knapp, W. Liebl, D. Manger, T. Meister, A. Pribil, J. Wursthorn, R. Lachner, B. Heinemann, H. Rucker, A. Fox, R. Barth, G. Fischer, S. Marschmeyer, D. Schmidt, A. Trusch, C. Wipf
{"title":"SiGe HBT and BiCMOS process integration optimization within the DOTSEVEN project","authors":"J. Bock, K. Aufinger, S. Boguth, C. Dahl, H. Knapp, W. Liebl, D. Manger, T. Meister, A. Pribil, J. Wursthorn, R. Lachner, B. Heinemann, H. Rucker, A. Fox, R. Barth, G. Fischer, S. Marschmeyer, D. Schmidt, A. Trusch, C. Wipf","doi":"10.1109/BCTM.2015.7340549","DOIUrl":"https://doi.org/10.1109/BCTM.2015.7340549","url":null,"abstract":"This paper describes the technology development activities within the European funding project DOTSEVEN done by Infineon and IHP. After half of the project duration Infineon has developed a 130 nm SiGe BiCMOS technology with fT of 250 GHz and fmax of 370 GHz. State-of-the-art MMIC performance is demonstrated by a 77 GHz automotive radar transmitter. The suitability of IHṔs advanced SiGe HBT module with epitaxial base link for future industrial BiCMOS platforms is demonstrated by integrating it in Infineon's 130 nm process resulting in an fmax of 500 GHz, 1.8 ps gate delay and a record 161 GHz static frequency divider. IHP has achieved an fmax of 570 GHz for the first time using an HBT concept with non-selective epitaxial base deposition and an elevated extrinsic base.","PeriodicalId":126143,"journal":{"name":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121862547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 120
110–140-GHz single-chip reconfigurable radar frontend with on-chip antenna 带有片上天线的110 - 140 ghz单芯片可重构雷达前端
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-12-03 DOI: 10.1109/BCTM.2015.7340553
S. Yuan, H. Schumacher
{"title":"110–140-GHz single-chip reconfigurable radar frontend with on-chip antenna","authors":"S. Yuan, H. Schumacher","doi":"10.1109/BCTM.2015.7340553","DOIUrl":"https://doi.org/10.1109/BCTM.2015.7340553","url":null,"abstract":"This paper presents a 110-140GHz reconfigurable radar frontend IC with on-chip antenna. The IC contains two switchable input buffers, two frequency multipliers, a PA, an LNA, a SPDT HBT switch and an on-chip antenna, fully integrated in a SiGe technology. The radar sensor is intended for a multistatic radar array where each unit can be configured as Tx or as Rx, providing more flexibility and information than conventional radar arrays. The chip can be configured either as transmitter or receiver. The packaged ICs have been characterized as an FMCW radar with and without dielectric lenses. The radar can cover a 30GHz bandwidth from 110 to 140 GHz, leading to a measured range resolution of 7.1 mm. An extend bandwidth of 46GHz is also possible with larger gain variation.","PeriodicalId":126143,"journal":{"name":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","volume":"119 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120972879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
90nm SiGe BiCMOS analog front-end circuits for 80GHz bandwidth large-swing transmitters 90nm SiGe BiCMOS模拟前端电路，用于80GHz带宽大摆变送器
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-12-03 DOI: 10.1109/BCTM.2015.7340568
J. Hoffman, J. R. Gosse, S. Shopov, S. Voinigescu, J. Pekarik, R. Camillo-Castillo, V. Jain, D. Harame
{"title":"90nm SiGe BiCMOS analog front-end circuits for 80GHz bandwidth large-swing transmitters","authors":"J. Hoffman, J. R. Gosse, S. Shopov, S. Voinigescu, J. Pekarik, R. Camillo-Castillo, V. Jain, D. Harame","doi":"10.1109/BCTM.2015.7340568","DOIUrl":"https://doi.org/10.1109/BCTM.2015.7340568","url":null,"abstract":"An 80GHz bandwidth distributed amplifier with 7Vpp differential output swing and PO1dB of 13 dBm per side, a 125GHz bandwidth PIN-diode SPST switch with 23dBm output compression point and over 22 dB of isolation up to 160 GHz, and a 40-100GHz bandpass filter with less than 3dB insertion loss are reported in a 90nm SiGe BiCMOS process. The circuits represent critical building blocks for analog transmitter or receiver front ends in next generation instrumentation and 100GBaud fiberoptic systems.","PeriodicalId":126143,"journal":{"name":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121183053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
An injection-locked 8.5 GHz VCO with decade-wide programmable locking range in SiGe BiCMOS SiGe BiCMOS中具有十年可编程锁定范围的注入锁定8.5 GHz压控振荡器
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-12-03 DOI: 10.1109/BCTM.2015.7340563
T. Chalvatzis
{"title":"An injection-locked 8.5 GHz VCO with decade-wide programmable locking range in SiGe BiCMOS","authors":"T. Chalvatzis","doi":"10.1109/BCTM.2015.7340563","DOIUrl":"https://doi.org/10.1109/BCTM.2015.7340563","url":null,"abstract":"This paper presents a low-noise subharmonically injection-locked VCO with programmable locking range. A pulse generator with programmable duty cycle converts the external reference signal into a narrow pulse that locks the VCO. Record low phase noise of -115 dBc/Hz at 100 kHz offset is achieved by combining a low-noise CML pulse generator with a cross-coupled VCO. The VCO features programmable locking range from 10 to 500 MHz. Fabricated in a production SiGe BiCMOS technology, the circuit demonstrates record low phase noise, both at close-in and far-out frequency offsets from the carrier.","PeriodicalId":126143,"journal":{"name":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115113455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 17 GHz programmable frequency divider for space applications in a 130 nm SiGe BiCMOS technology 用于空间应用的17ghz可编程分频器，采用130nm SiGe BiCMOS技术
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-12-03 DOI: 10.1109/BCTM.2015.7340548
F. Herzel, J. Borngraber, A. Ergintav, M. Kucharski, D. Kissinger
{"title":"A 17 GHz programmable frequency divider for space applications in a 130 nm SiGe BiCMOS technology","authors":"F. Herzel, J. Borngraber, A. Ergintav, M. Kucharski, D. Kissinger","doi":"10.1109/BCTM.2015.7340548","DOIUrl":"https://doi.org/10.1109/BCTM.2015.7340548","url":null,"abstract":"A programmable frequency divider for fractional-N frequency synthesizers is presented. The input frequency range is from DC to 17GHz for divider ratios from 16 to 255. We show by analysis and time-domain simulations that the quantization noise folding in a fractional-N PLL can be reduced tremendously, if a prescaler between VCO and programmable divider can be avoided by using this high-speed divider. The programmable divider was manufactured in a 130nm SiGe BiCMOS technology. Robust operation is obtained from a supply voltage VCC=3D2.3-3.9 V. The measured divider phase noise floor for a 100 MHz output signal is as low as -156dBc/Hz. The chip occupies 1.7 mm2 including bondpads and draws 154mA from a 2.3V supply.","PeriodicalId":126143,"journal":{"name":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","volume":"266 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132119356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A 0.8–3GHz wideband folded down-converter with noise cancellation in 0.18um SiGe technology 一种0.8-3GHz宽带折叠下变频器，采用0.18um SiGe技术进行降噪
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-12-03 DOI: 10.1109/BCTM.2015.7340581
Zhan Su, F. Dai, B. Wilamowski, M. Hamilton, Wei Zhou, Yudong Wang, Jun Fu
{"title":"A 0.8–3GHz wideband folded down-converter with noise cancellation in 0.18um SiGe technology","authors":"Zhan Su, F. Dai, B. Wilamowski, M. Hamilton, Wei Zhou, Yudong Wang, Jun Fu","doi":"10.1109/BCTM.2015.7340581","DOIUrl":"https://doi.org/10.1109/BCTM.2015.7340581","url":null,"abstract":"This paper proposes a wideband low-noise down converter with operational frequency ranging from 0.8-3GHz in 0.18μm SiGe technology. The down converter is based on a double balanced Gilbert cell configuration with folded structure to lower the supply voltage. The folded structure also allows separate bias for the mixer and the gm stages to optimizing their performances. Bipolar based gm cell with noise cancellation is employed to achieve low noise and wideband input matching. Measured results show average single-sideband noise figure of 6.5dB and conversion gain of 20.5 dB across the entire wide input bandwidth from 0.8~3GHz. The measured HP3 is around -5 dBm with 13.5mW power consumption under a 1.5V power supply. The wideband down-converter chip is implemented in 0.18nm SiGe technology with area of 2 mm2.","PeriodicalId":126143,"journal":{"name":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130814853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Challenges and methodologies in EM simulation with circuit models 用电路模型进行电磁仿真的挑战和方法
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-12-03 DOI: 10.1109/BCTM.2015.7340575
Michael Thompson, J. Moore
{"title":"Challenges and methodologies in EM simulation with circuit models","authors":"Michael Thompson, J. Moore","doi":"10.1109/BCTM.2015.7340575","DOIUrl":"https://doi.org/10.1109/BCTM.2015.7340575","url":null,"abstract":"Combining circuit elements and complete circuit descriptions level with the EM predicted performance of electromagnetic techniques that generate electrical models of the component interconnects and the packaging or physical environment around the circuits is an area where the theory of engineering meets the art of engineering. The circuit node “0” for ground is a misnomer at times in simulation and adversely limits the understanding of circuit and EM co-simulation results. This coupled with a lack of understanding regarding consistence device (transistor or passive elements) and EM structure excitation can result in structures and simulation results that do not accurately reflect the true physical problem and thus inaccurate results are obtained. In this paper the authors will frame the issues and describe methodologies for combining these two different simulation domains to improve the predicted performance of computer models to guide the designer or design team to reliable and useful simulation results.","PeriodicalId":126143,"journal":{"name":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","volume":"335 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122303713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
SiGe HBT modeling for mm-wave circuit design 用于毫米波电路设计的SiGe HBT建模
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-12-03 DOI: 10.1109/BCTM.2015.7340560
A. Pawlak, S. Lehmann, P. Sakalas, J. Krause, K. Aufinger, B. Ardouin, M. Schroter
{"title":"SiGe HBT modeling for mm-wave circuit design","authors":"A. Pawlak, S. Lehmann, P. Sakalas, J. Krause, K. Aufinger, B. Ardouin, M. Schroter","doi":"10.1109/BCTM.2015.7340560","DOIUrl":"https://doi.org/10.1109/BCTM.2015.7340560","url":null,"abstract":"An overview on the compact modeling activities within the DOTSEVEN project is given. Issues such as geometry scaling, substrate coupling and thermal effects as well as HICUM Level 2 features enabling the accurate modeling of the linear and non-linear characteristics of the latest generation of SiGe HBTs are discussed. Furthermore, experimental results for the most important DC and small-signal characteristics as well as selected examples for non-linear modeling of the most advanced SiGe HBTs from two different technologies are presented. Model verification issues related to limited on-wafer high-frequency measurement capability and the accurate calibration at multi-hundred GHz are briefly touched.","PeriodicalId":126143,"journal":{"name":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125248096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Analysis of residual errors due to calibration transfer in on-wafer measurements at mm-wave frequencies 毫米波频率下晶圆测量中校准传递的剩余误差分析
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-12-03 DOI: 10.1109/BCTM.2015.7340569
L. Galatro, M. Spirito
{"title":"Analysis of residual errors due to calibration transfer in on-wafer measurements at mm-wave frequencies","authors":"L. Galatro, M. Spirito","doi":"10.1109/BCTM.2015.7340569","DOIUrl":"https://doi.org/10.1109/BCTM.2015.7340569","url":null,"abstract":"in this work we analyze, by means of 3D electromagnetic simulations, the accuracy limitations of mm-wave probe-level calibrations. The field coupling of the unshielded probe-wafer transition is the considered source of calibration inaccuracy when changing substrate between calibration and measurements. The problem of calibration transfer is first schematized in terms of error box analysis. After, EM simulations are used to assess the residual error associated to the calibration transfer. A method for error minimization is proposed, showing an improvement as high as 50% on measurement results (65% on simulations) when transferring the calibration from alumina (εr=3D9.6) to SiGe back-end-of-line (εr=3D4.1).","PeriodicalId":126143,"journal":{"name":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","volume":"236 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130762350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A 47–217 GHz dynamic frequency divider in SiGe technology SiGe技术中的47 - 217ghz动态分频器
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Pub Date : 2015-12-03 DOI: 10.1109/BCTM.2015.7340570
Jidan Al-Eryani, H. Knapp, Hao Li, K. Aufinger, J. Wursthorn, S. Majied, L. Maurer
{"title":"A 47–217 GHz dynamic frequency divider in SiGe technology","authors":"Jidan Al-Eryani, H. Knapp, Hao Li, K. Aufinger, J. Wursthorn, S. Majied, L. Maurer","doi":"10.1109/BCTM.2015.7340570","DOIUrl":"https://doi.org/10.1109/BCTM.2015.7340570","url":null,"abstract":"A divide-by-2 dynamic frequency divider with a frequency operating range from 47 up to 217GHz, i.e. a bandwidth of 170GHz, in a 130nm SiGe BiCMOS process with cut-off frequency fT =3D250 GHz is presented. To the best of authors' knowledge, this is the highest operating frequency and bandwidth reported so far in silicon. The divider is based on the regenerative frequency division principle followed by a buffer that can deliver ~-12.5dBm output power (no probe or waveguide/cable loss correction) at 217 GHz input frequency, which is sufficient to drive succeeding stages. The divider's correct functionality over its entire operating frequency range is verified with lab measurements.","PeriodicalId":126143,"journal":{"name":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122829958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
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