{"title":"An injection-locked 8.5 GHz VCO with decade-wide programmable locking range in SiGe BiCMOS","authors":"T. Chalvatzis","doi":"10.1109/BCTM.2015.7340563","DOIUrl":null,"url":null,"abstract":"This paper presents a low-noise subharmonically injection-locked VCO with programmable locking range. A pulse generator with programmable duty cycle converts the external reference signal into a narrow pulse that locks the VCO. Record low phase noise of -115 dBc/Hz at 100 kHz offset is achieved by combining a low-noise CML pulse generator with a cross-coupled VCO. The VCO features programmable locking range from 10 to 500 MHz. Fabricated in a production SiGe BiCMOS technology, the circuit demonstrates record low phase noise, both at close-in and far-out frequency offsets from the carrier.","PeriodicalId":126143,"journal":{"name":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCTM.2015.7340563","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents a low-noise subharmonically injection-locked VCO with programmable locking range. A pulse generator with programmable duty cycle converts the external reference signal into a narrow pulse that locks the VCO. Record low phase noise of -115 dBc/Hz at 100 kHz offset is achieved by combining a low-noise CML pulse generator with a cross-coupled VCO. The VCO features programmable locking range from 10 to 500 MHz. Fabricated in a production SiGe BiCMOS technology, the circuit demonstrates record low phase noise, both at close-in and far-out frequency offsets from the carrier.