Single-chip transmit-receive module with a fully integrated differential RF-MEMS antenna switch and a high-voltage generator for F-band radars

V. Valenta, H. Schumacher, S. Wipf, M. Wietstruck, A. Goeritz, M. Kaynak, W. Winkler
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引用次数: 13

Abstract

A single-chip solution for short-range F-band radar systems is presented. It is based on a Transmit-Receive (TR) module realized in a 130 nm BiCMOS process, with a fully integrated chain of Gilbert-cell frequency multipliers generating the required F-band carrier for both transmit and receive paths, a differential Single-Pole-Double-Throw (SPDT) switch that relies on novel differential RF Micro-Electro-Mechanical (RF-MEMS) switches and a High-Voltage (HV) generator providing the required charging and discharging 50 V signals for the RF-MEMS switches. Thanks to a dedicated compensation strategy, the radar module can be packaged using low-cost techniques and wire-bonded to an off-chip antenna without compromising the performance in the band of interest. To boost the link budget by 30 dB, dielectric lenses are used. Full functionality of the realized TR module has been experimentally confirmed, and characterizations of the SPDT switch components, such as RF-MEMS switch and balanced transmission lines were completed.
单芯片收发模块,具有完全集成的差分RF-MEMS天线开关和用于f波段雷达的高压发生器
提出了一种用于近程f波段雷达系统的单片机解决方案。它基于在130 nm BiCMOS工艺中实现的收发(TR)模块,具有完全集成的吉尔伯特单元乘频器链,为发射和接收路径产生所需的f波段载波,差分单极双置(SPDT)开关依赖于新型差分射频微机电(RF- mems)开关和高压(HV)发生器,为RF- mems开关提供所需的充电和放电50 V信号。由于采用了专门的补偿策略,雷达模块可以使用低成本技术进行封装,并与片外天线进行线绑定,而不会影响感兴趣频段的性能。为了将链路预算提高30 dB,使用了介电透镜。实验证实了所实现的TR模块的全部功能,并完成了SPDT开关元件的表征,如RF-MEMS开关和平衡传输线。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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