A broadband nonlinear lumped model for silicon IMPATT diodes

Abstract

A new circuit model based on time-domain characterization of Impact Ionization Avalanche Transit-Time (IMPATT) devices is proposed. The model introduces a new 3rd order low-pass filter to accurately model the delay response of carrier drift inside the drift region, thereby capturing the dispersion caused by carrier diffusion. Moreover, non-stationary effects inside avalanche region as well as the impact of avalanche length modulation on the displacement current are modeled through nonlinear avalanche capacitance.