A 135–150 GHz frequency quadrupler with 0.5 dBm peak output power in 55 nm SiGe BiCMOS technology

Abstract

A millimeter-wave frequency quadrupler implemented in BiCMOS 55 nm process from STMicroelectronics for in situ load-pull D band characterization is proposed. The circuit consists on cascaded doublers with intermediate power amplifiers to increase the output power. Two high-pass filters allow the rejection of the first and 2nd harmonics to obtain pure 4th harmonic output frequency. The measured peak output power is 0.5 dBm at 150 GHz with 14 GHz 3dB bandwidth and a DC power consumption of 0.63W. A good agreement between measurement and simulation results is observed.