{"title":"用于BiCMOS技术无线收发器的毫米波集成电路","authors":"P. Heydari","doi":"10.1109/BCTM.2015.7340577","DOIUrl":null,"url":null,"abstract":"This invited paper provides an overview of important attributes of a BiCMOS process in designing high-performance mm-wave integrated circuits, and contends, through several design examples, that it is perhaps one of the best process technologies for wireless applications that seek both high level of integration and high performance. In comparative study of BiCMOS performance compared to Silicon CMOS or III-V technologies, system-level considerations and circuit design issues will be illustrated. Several case studies including mm-wave integrated circuits designed and fabricated in BiCMOS processes will be introduced to provide experimental proof to these comparative studies.","PeriodicalId":126143,"journal":{"name":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","volume":"108 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Millimeter-wave integrated circuits for wireless transceivers in BiCMOS technologies\",\"authors\":\"P. Heydari\",\"doi\":\"10.1109/BCTM.2015.7340577\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This invited paper provides an overview of important attributes of a BiCMOS process in designing high-performance mm-wave integrated circuits, and contends, through several design examples, that it is perhaps one of the best process technologies for wireless applications that seek both high level of integration and high performance. In comparative study of BiCMOS performance compared to Silicon CMOS or III-V technologies, system-level considerations and circuit design issues will be illustrated. Several case studies including mm-wave integrated circuits designed and fabricated in BiCMOS processes will be introduced to provide experimental proof to these comparative studies.\",\"PeriodicalId\":126143,\"journal\":{\"name\":\"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM\",\"volume\":\"108 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-12-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCTM.2015.7340577\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCTM.2015.7340577","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Millimeter-wave integrated circuits for wireless transceivers in BiCMOS technologies
This invited paper provides an overview of important attributes of a BiCMOS process in designing high-performance mm-wave integrated circuits, and contends, through several design examples, that it is perhaps one of the best process technologies for wireless applications that seek both high level of integration and high performance. In comparative study of BiCMOS performance compared to Silicon CMOS or III-V technologies, system-level considerations and circuit design issues will be illustrated. Several case studies including mm-wave integrated circuits designed and fabricated in BiCMOS processes will be introduced to provide experimental proof to these comparative studies.