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2013 International Conference on Indium Phosphide and Related Materials (IPRM)最新文献

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Single-photon emission in telecommunication band from an InAs quantum dot in a pillar structure 柱状结构中InAs量子点在电信波段的单光子发射
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562567
X. Liu, N. Kobayashi, K. Akahane, M. Sasaki, H. Kumano, I. Suemune
{"title":"Single-photon emission in telecommunication band from an InAs quantum dot in a pillar structure","authors":"X. Liu, N. Kobayashi, K. Akahane, M. Sasaki, H. Kumano, I. Suemune","doi":"10.1109/ICIPRM.2013.6562567","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562567","url":null,"abstract":"We report on the experimental demonstration of single-photon source based on a single InAs quantum dot emitting in the telecommunication band. The low-density quantum dots grown by epitaxial method are embedded in an asetched pillar structure. Photoluminescence spectrum of a single InAs quantum dot exhibits intense and narrow emission lines. Photon antibunching behavior is clearly observed using superconducting single-photon detectors with high sensitivity, which indicates the single-photon emission.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"133 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115930173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Selective area MOVPE of InGaAsP and InGaN systems as process analytical and design tools for OEICs InGaAsP和InGaN系统作为OEICs的工艺分析和设计工具的选择性区域MOVPE
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562576
Y. Shimogaki, M. Sugiyama, Y. Nakano
{"title":"Selective area MOVPE of InGaAsP and InGaN systems as process analytical and design tools for OEICs","authors":"Y. Shimogaki, M. Sugiyama, Y. Nakano","doi":"10.1109/ICIPRM.2013.6562576","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562576","url":null,"abstract":"Numerical simulation on growth rate non-uniformity of selective area growth (SAG) in metal-organic vapor phase epitaxy (MOVPE) is an effective method to examine the surface reaction kinetics, which is normally hindered by mass transport rate of precursors. SAG is also an effective tool to fabricate opto-electronic integrated circuits (OEICs) to reduce the process steps. In the present talk, the kinetic analyses on InGaAsP and InGaN MOVPE processes using SAG will be presented.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123678649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Travelling wave Mach-Zehnder modulators 行波马赫-曾德尔调制器
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562568
K. Prosyk, A. Ait-Ouali, Junfu Chen, M. Hamacher, D. Hoffmann, R. Kaiser, R. Millett, A. Pirastu, M. Totolo, K. Velthaus, I. Woods
{"title":"Travelling wave Mach-Zehnder modulators","authors":"K. Prosyk, A. Ait-Ouali, Junfu Chen, M. Hamacher, D. Hoffmann, R. Kaiser, R. Millett, A. Pirastu, M. Totolo, K. Velthaus, I. Woods","doi":"10.1109/ICIPRM.2013.6562568","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562568","url":null,"abstract":"Travelling wave electrode Mach-Zehnder modulators in InP/InGaAsP are investigated for application to advanced digital optical fibre formats. Single-end 50-Ohm and novel differential 100-Ohm designs are described.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122442004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Comparative study on frequency limits of nanoscale HEMTs with various channel materials 不同沟道材料纳米hemt频率限制的比较研究
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562649
Y. Nagai, Shohei Nagai, J. Sato, S. Hara, H. Fujishiro, A. Endoh, I. Watanabe, A. Kasamatsu
{"title":"Comparative study on frequency limits of nanoscale HEMTs with various channel materials","authors":"Y. Nagai, Shohei Nagai, J. Sato, S. Hara, H. Fujishiro, A. Endoh, I. Watanabe, A. Kasamatsu","doi":"10.1109/ICIPRM.2013.6562649","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562649","url":null,"abstract":"The frequency limits in intrinsic fT of the nano-scale HEMTs with various channel materials are investigated by using the quantum-corrected Monte Carlo simulation. The device C with the InSb channel exhibits the higher intrinsic f<sub>T</sub> from the lower V<sub>ds</sub> because of the higher electron velocity. Owing to the shorter limit in the L<sub>g</sub> scaling at the lower V<sub>ds</sub>, the device C also exhibits the higher frequency limit in the intrinsic f<sub>T</sub>, indicating its potential for the low power and THz operation.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"197 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122597909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Improvement in nonlinear characteristics of zero bias GaAsSb-based backward diodes 零偏置gaassb基后向二极管非线性特性的改进
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562640
Tsuyoshi Takahashi, Masaru Sato, Y. Nakasha, N. Hara
{"title":"Improvement in nonlinear characteristics of zero bias GaAsSb-based backward diodes","authors":"Tsuyoshi Takahashi, Masaru Sato, Y. Nakasha, N. Hara","doi":"10.1109/ICIPRM.2013.6562640","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562640","url":null,"abstract":"A high curvature coefficient (γ) of 49.4 V-1 was achieved at zero bias using p-GaAsSb/i-InAlAs/n-InGaAs backward diodes that were lattice-matched to an InP substrate. γ indicates a higher value than that of ideal Schottky diodes (39.6 V-1). Backward diodes with such a high y are applicable in mixers. The doping concentration in the p-GaAsSb layer was optimized to obtain an ideal energy band structure for a backward diode. The impedance-matched voltage sensitivity (βv,opt) at 94 GHz was estimated to be 6,069 V/W using a diode of 3.0 μm diameter.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127737690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Cryogenic DC characterization of InAs/Al80Ga20Sb self-switching diodes InAs/Al80Ga20Sb自开关二极管的低温直流特性研究
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562599
A. Westlund, G. Moschetti, P. Nilsson, J. Grahn, L. Desplanque, X. Wallart
{"title":"Cryogenic DC characterization of InAs/Al80Ga20Sb self-switching diodes","authors":"A. Westlund, G. Moschetti, P. Nilsson, J. Grahn, L. Desplanque, X. Wallart","doi":"10.1109/ICIPRM.2013.6562599","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562599","url":null,"abstract":"DC characterization of an InAs/Al80Ga20Sb self-switching diode for THz detection is presented at 300 K and 6 K. Compared to 300 K, an enhancement of the diode I-V nonlinearity and associated responsivity was observed under zerobias conditions at 6 K. The intrinsic responsivity was estimated to 490 V/W at 300 K and 4400 V/W at 6 K.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128845793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Optimization of metamorphic buffer layers for extended-InGaAs/InP photodetectors 扩展ingaas /InP光电探测器的变质缓冲层优化
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562583
S. Seifert, R. Ravash, D. Franke, F. Wenning, D. Zengler, F. Kießling
{"title":"Optimization of metamorphic buffer layers for extended-InGaAs/InP photodetectors","authors":"S. Seifert, R. Ravash, D. Franke, F. Wenning, D. Zengler, F. Kießling","doi":"10.1109/ICIPRM.2013.6562583","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562583","url":null,"abstract":"Optimized extended-InGaAs photodetectors were grown on InP substrate using metamorphic buffer layers to achieve a strain relaxation. The samples were investigated by transmission electron microscopy and X-Ray diffraction. The results show that a number of metamorphic buffer layers and their thickness play an important role in material quality and photodetectors performance.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115365897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multi-regrowth steps for the realization of buried single ridge and μ-stripes quantum cascade lasers 实现埋置单脊和μ条纹量子级联激光器的多个再生步骤
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562597
O. Parillaud, G. de Naurois, B. Simozrag, V. Trinité, G. Maisons, M. Garcia, B. Gérard, M. Carras, W. Metaferia, C. Junesand, H. Kataria, Y. Sun, S. Lourdudoss
{"title":"Multi-regrowth steps for the realization of buried single ridge and μ-stripes quantum cascade lasers","authors":"O. Parillaud, G. de Naurois, B. Simozrag, V. Trinité, G. Maisons, M. Garcia, B. Gérard, M. Carras, W. Metaferia, C. Junesand, H. Kataria, Y. Sun, S. Lourdudoss","doi":"10.1109/ICIPRM.2013.6562597","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562597","url":null,"abstract":"We report on the realization of buried single ridge and μ-stripes quantum cascade lasers using HVPE and MOVPE regrowth steps of semi-insulating InP:Fe and Si doped layers. We present here the preliminary results obtained on these devices. The reduction of the thermal resistance achieved using semiinsulating InP:Fe for regrowth planarization and μ-stripe arrays approaches are shown and performance perspectives are addressed.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114297643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Wurtzite Gallium Phosphide has a direct-band gap 纤锌矿磷化镓具有直接带隙
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562565
S. Assali, I. Zardo, S. Plissard, M. Verheijen, J. Haverkort, E. Bakkers
{"title":"Wurtzite Gallium Phosphide has a direct-band gap","authors":"S. Assali, I. Zardo, S. Plissard, M. Verheijen, J. Haverkort, E. Bakkers","doi":"10.1109/ICIPRM.2013.6562565","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562565","url":null,"abstract":"Gallium Phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the emission efficiency. We report the fabrication of GaP nanowires with pure hexagonal crystal structure and demonstrate the direct nature of the band gap. We observe strong photoluminescence at a wavelength of 594nm with short lifetime, typical for a direct band gap. Furthermore, by incorporation of aluminum or arsenic in the GaP nanowires, the emitted wavelength can be tuned across an important range of the visible light spectrum (555690nm). This approach of crystal structure engineering enables new pathways for tailoring materials properties enhancing functionality.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126922010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Influence of gate-channel distance in low-noise InP HEMTs 低噪声InP hemt中栅极通道距离的影响
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562602
P. Nilsson, H. Rodilla, J. Rodilla, N. Wadefalk, J. Grahn
{"title":"Influence of gate-channel distance in low-noise InP HEMTs","authors":"P. Nilsson, H. Rodilla, J. Rodilla, N. Wadefalk, J. Grahn","doi":"10.1109/ICIPRM.2013.6562602","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562602","url":null,"abstract":"The effect on the electrical properties, relevant to noise, from the gate-channel distance (barrier layer thickness) in 130 nm gate-length InP HEMTs was investigated. An increased quality of pinch-off was seen in HEMTs with an 8 nm barrier layer thickness compared to an 11 nm barrier. For the 8 nm barrier material the gate leakage increased from 1 μA/mm to 7 μA/mm at -1V gate bias.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"2351 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127475734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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