扩展ingaas /InP光电探测器的变质缓冲层优化

2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI:10.1109/ICIPRM.2013.6562583

S. Seifert, R. Ravash, D. Franke, F. Wenning, D. Zengler, F. Kießling

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引用次数: 0

摘要

利用变质缓冲层在InP衬底上生长优化的扩展ingaas光电探测器，以实现应变松弛。采用透射电镜和x射线衍射对样品进行了表征。结果表明，变质缓冲层的数量及其厚度对材料质量和光电探测器性能有重要影响。

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Optimization of metamorphic buffer layers for extended-InGaAs/InP photodetectors

Optimized extended-InGaAs photodetectors were grown on InP substrate using metamorphic buffer layers to achieve a strain relaxation. The samples were investigated by transmission electron microscopy and X-Ray diffraction. The results show that a number of metamorphic buffer layers and their thickness play an important role in material quality and photodetectors performance.

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2013 International Conference on Indium Phosphide and Related Materials (IPRM)

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