扩展ingaas /InP光电探测器的变质缓冲层优化

S. Seifert, R. Ravash, D. Franke, F. Wenning, D. Zengler, F. Kießling
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引用次数: 0

摘要

利用变质缓冲层在InP衬底上生长优化的扩展ingaas光电探测器,以实现应变松弛。采用透射电镜和x射线衍射对样品进行了表征。结果表明,变质缓冲层的数量及其厚度对材料质量和光电探测器性能有重要影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Optimization of metamorphic buffer layers for extended-InGaAs/InP photodetectors
Optimized extended-InGaAs photodetectors were grown on InP substrate using metamorphic buffer layers to achieve a strain relaxation. The samples were investigated by transmission electron microscopy and X-Ray diffraction. The results show that a number of metamorphic buffer layers and their thickness play an important role in material quality and photodetectors performance.
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