P. Nilsson, H. Rodilla, J. Rodilla, N. Wadefalk, J. Grahn
{"title":"低噪声InP hemt中栅极通道距离的影响","authors":"P. Nilsson, H. Rodilla, J. Rodilla, N. Wadefalk, J. Grahn","doi":"10.1109/ICIPRM.2013.6562602","DOIUrl":null,"url":null,"abstract":"The effect on the electrical properties, relevant to noise, from the gate-channel distance (barrier layer thickness) in 130 nm gate-length InP HEMTs was investigated. An increased quality of pinch-off was seen in HEMTs with an 8 nm barrier layer thickness compared to an 11 nm barrier. For the 8 nm barrier material the gate leakage increased from 1 μA/mm to 7 μA/mm at -1V gate bias.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Influence of gate-channel distance in low-noise InP HEMTs\",\"authors\":\"P. Nilsson, H. Rodilla, J. Rodilla, N. Wadefalk, J. Grahn\",\"doi\":\"10.1109/ICIPRM.2013.6562602\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effect on the electrical properties, relevant to noise, from the gate-channel distance (barrier layer thickness) in 130 nm gate-length InP HEMTs was investigated. An increased quality of pinch-off was seen in HEMTs with an 8 nm barrier layer thickness compared to an 11 nm barrier. For the 8 nm barrier material the gate leakage increased from 1 μA/mm to 7 μA/mm at -1V gate bias.\",\"PeriodicalId\":120297,\"journal\":{\"name\":\"2013 International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-05-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2013.6562602\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2013.6562602","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Influence of gate-channel distance in low-noise InP HEMTs
The effect on the electrical properties, relevant to noise, from the gate-channel distance (barrier layer thickness) in 130 nm gate-length InP HEMTs was investigated. An increased quality of pinch-off was seen in HEMTs with an 8 nm barrier layer thickness compared to an 11 nm barrier. For the 8 nm barrier material the gate leakage increased from 1 μA/mm to 7 μA/mm at -1V gate bias.
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