纤锌矿磷化镓具有直接带隙

S. Assali, I. Zardo, S. Plissard, M. Verheijen, J. Haverkort, E. Bakkers
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引用次数: 3

摘要

正常立方晶体结构的磷化镓(GaP)存在间接带隙,严重限制了其发射效率。我们报道了具有纯六方晶体结构的GaP纳米线的制备,并证明了带隙的直接性质。我们在594nm波长处观察到强烈的光致发光,寿命短,典型的直接带隙。此外,通过在GaP纳米线中掺入铝或砷,可以在可见光光谱(555690nm)的重要范围内调谐发射波长。这种晶体结构工程的方法为定制材料特性和增强功能提供了新的途径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Wurtzite Gallium Phosphide has a direct-band gap
Gallium Phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the emission efficiency. We report the fabrication of GaP nanowires with pure hexagonal crystal structure and demonstrate the direct nature of the band gap. We observe strong photoluminescence at a wavelength of 594nm with short lifetime, typical for a direct band gap. Furthermore, by incorporation of aluminum or arsenic in the GaP nanowires, the emitted wavelength can be tuned across an important range of the visible light spectrum (555690nm). This approach of crystal structure engineering enables new pathways for tailoring materials properties enhancing functionality.
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