{"title":"InGaAsP和InGaN系统作为OEICs的工艺分析和设计工具的选择性区域MOVPE","authors":"Y. Shimogaki, M. Sugiyama, Y. Nakano","doi":"10.1109/ICIPRM.2013.6562576","DOIUrl":null,"url":null,"abstract":"Numerical simulation on growth rate non-uniformity of selective area growth (SAG) in metal-organic vapor phase epitaxy (MOVPE) is an effective method to examine the surface reaction kinetics, which is normally hindered by mass transport rate of precursors. SAG is also an effective tool to fabricate opto-electronic integrated circuits (OEICs) to reduce the process steps. In the present talk, the kinetic analyses on InGaAsP and InGaN MOVPE processes using SAG will be presented.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Selective area MOVPE of InGaAsP and InGaN systems as process analytical and design tools for OEICs\",\"authors\":\"Y. Shimogaki, M. Sugiyama, Y. Nakano\",\"doi\":\"10.1109/ICIPRM.2013.6562576\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Numerical simulation on growth rate non-uniformity of selective area growth (SAG) in metal-organic vapor phase epitaxy (MOVPE) is an effective method to examine the surface reaction kinetics, which is normally hindered by mass transport rate of precursors. SAG is also an effective tool to fabricate opto-electronic integrated circuits (OEICs) to reduce the process steps. In the present talk, the kinetic analyses on InGaAsP and InGaN MOVPE processes using SAG will be presented.\",\"PeriodicalId\":120297,\"journal\":{\"name\":\"2013 International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-05-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2013.6562576\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2013.6562576","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Selective area MOVPE of InGaAsP and InGaN systems as process analytical and design tools for OEICs
Numerical simulation on growth rate non-uniformity of selective area growth (SAG) in metal-organic vapor phase epitaxy (MOVPE) is an effective method to examine the surface reaction kinetics, which is normally hindered by mass transport rate of precursors. SAG is also an effective tool to fabricate opto-electronic integrated circuits (OEICs) to reduce the process steps. In the present talk, the kinetic analyses on InGaAsP and InGaN MOVPE processes using SAG will be presented.
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