发布求助
文献互助 智能选刊 最新文献

2013 International Conference on Indium Phosphide and Related Materials (IPRM)最新文献

筛选
英文 中文
Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): Effect of QD size, indium composition and nitrogen incorporation (in,Ga)As(N)/GaP量子点(QDs)的光学跃迁性质:QD尺寸、铟组成和氮掺入的影响
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562587
C. Robert, C. Cornet, K. Pereira da Silva, P. Turban, S. Mauger, T. Nguyen Thanh, J. Even, J. Jancu, M. Perrin, H. Folliot, T. Rohel, S. Tricot, A. Balocchi, P. Barate, X. Marie, P. Koenraad, M. Alonso, A. Goi, N. Bertru, O. Durand, A. Le Corre
{"title":"Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): Effect of QD size, indium composition and nitrogen incorporation","authors":"C. Robert, C. Cornet, K. Pereira da Silva, P. Turban, S. Mauger, T. Nguyen Thanh, J. Even, J. Jancu, M. Perrin, H. Folliot, T. Rohel, S. Tricot, A. Balocchi, P. Barate, X. Marie, P. Koenraad, M. Alonso, A. Goi, N. Bertru, O. Durand, A. Le Corre","doi":"10.1109/ICIPRM.2013.6562587","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562587","url":null,"abstract":"The structural properties of (In,Ga)As/GaP quantum dots (QDs) are studied by plane view and cross scanning tunneling microscopy. Time-resolved and pressure dependent photoluminescence experiments show a ground optical transition of indirect type. Mixed k.p/tight-binding simulations indicate a possible indirect to direct crossover depending on indium content and QD size. The incorporation of nitrogen in QDs is finally shown.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"23 10","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132025806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis on channel thickness fluctuation scattering in InGaAs-OI MOSFETs InGaAs-OI mosfet沟道厚度波动散射分析
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562632
S. H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, S. Takagi
{"title":"Analysis on channel thickness fluctuation scattering in InGaAs-OI MOSFETs","authors":"S. H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, S. Takagi","doi":"10.1109/ICIPRM.2013.6562632","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562632","url":null,"abstract":"Effects of channel-thickness-fluctuation scattering on electron mobility have been analyzed and it was found that channel-thickness-fluctuation scattering is important parameters decide mobility in ETB III-V-OI MOSFETs. Also, we have clarified that the introduction of MOS interface buffer layer is effective to enhance mobility through the increase of μfluctuation.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125480221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High performance modulation doped AlGaAs/InGaAs thermopiles (H-PILEs) for uncooled IR FPA utilizing integrated HEMT-MEMS technology 采用集成HEMT-MEMS技术的高性能调制掺杂AlGaAs/InGaAs热电堆(H-PILEs)用于非制冷红外FPA
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562643
M. Abe, K. Ang, R. Hofstetter, Hong Wang, G. Ng
{"title":"High performance modulation doped AlGaAs/InGaAs thermopiles (H-PILEs) for uncooled IR FPA utilizing integrated HEMT-MEMS technology","authors":"M. Abe, K. Ang, R. Hofstetter, Hong Wang, G. Ng","doi":"10.1109/ICIPRM.2013.6562643","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562643","url":null,"abstract":"Novel thermopile based on modulation doped AlGaAs/InGaAs heterostructures is proposed and developed for uncooled infrared FPA (Focal Plane Array) image sensor application. The high sensitivity performance is designed to be the responsivity R of 33,000 V/W with the response time IJ of 8 ms, and the high speed performance is designed to be R of 4,900 V/W with IJ of 110 μs, under the 2 μm design rule. Based on integrated HEMT-MEMS technology, the 32×32 matrix FPA is fabricated to demonstrate its enhanced performances by black body measurement. The technology presented here demonstrates the potential of this approach for low-cost uncooled infrared FPA application.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121043781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 1×4 MMI-integrated high-power waveguide photodetector 一种1×4微型集成高功率波导光电探测器
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562571
E. Rouvalis, P. Muller, D. Trommer, J. Stephan, A. Steffan, G. Unterborsch
{"title":"A 1×4 MMI-integrated high-power waveguide photodetector","authors":"E. Rouvalis, P. Muller, D. Trommer, J. Stephan, A. Steffan, G. Unterborsch","doi":"10.1109/ICIPRM.2013.6562571","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562571","url":null,"abstract":"We report on the design, packaging and experimental characterization of a waveguide photodetector monolithically integrated with a 1×4 MMI coupler and a vertically-tapered spotsize converter. The total device consists of an array of 4 photodiodes connected in parallel in order to increase the saturation current. A 3-dB bandwidth of up to 30 GHz was measured. High output power was achieved with approximately 10 dBm at 10 GHz and 7.5 dBm at 20 GHz. From 1-dB compression measurements at 10 GHz and 2 0 GHz, a saturation photocurrent as high as 40 mA was found. At 10 GHz and 20 GHz a third order intercept point (OIP3) of over 20 dBm was measured for photocurrent levels up to 35 mA.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131560524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Design of multi-functional GaInAsP/Si hybrid semiconductor optical amplifier array with AlInAs-oxide current confinement layer 具有AlInAs-oxide电流约束层的多功能GaInAsP/Si混合半导体光放大器阵列设计
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562621
Y. Hayashi, K. Fukuda, R. Osabe, Jun-ichi Suzuki, Y. Atsumi, Joonhyun Kang, N. Nishiyama, S. Arai
{"title":"Design of multi-functional GaInAsP/Si hybrid semiconductor optical amplifier array with AlInAs-oxide current confinement layer","authors":"Y. Hayashi, K. Fukuda, R. Osabe, Jun-ichi Suzuki, Y. Atsumi, Joonhyun Kang, N. Nishiyama, S. Arai","doi":"10.1109/ICIPRM.2013.6562621","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562621","url":null,"abstract":"Novel configuration of multi-functional SOA array by III-V/Si hybrid technique using one-time III-V/Si wafer bonding is proposed. A III-V/Si hybrid structure can realize multi-functional SOA array with different gain characteristics by tuning Si waveguide width.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122885042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
AlGaInAs selective area growth for high-speed EAM-based PIC sources 高速eam型PIC源的AlGaInAs选择性面积生长
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562625
J. Decobert, P. Lagrée, H. Guerault, C. Kazmierski
{"title":"AlGaInAs selective area growth for high-speed EAM-based PIC sources","authors":"J. Decobert, P. Lagrée, H. Guerault, C. Kazmierski","doi":"10.1109/ICIPRM.2013.6562625","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562625","url":null,"abstract":"We present a generic integration platform based on the SAG of AlGaInAs/InP MQW material. For efficient bandgap engineering of the different areas of the PICs, active and passive function heterostructures are precisely modeled and characterized in the SAG zones. This approach has allowed to design novel high-speed InP-based PIC.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124449389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
1540 to 1645 nm continuous VCSEL emission based on quantum dashes 基于量子破折号的1540 ~ 1645 nm连续VCSEL发射
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562594
C. Paranthoen, C. Levallois, J. Gauthier, F. Taleb, N. Chevalier, M. Perrin, Y. Léger, O. de Sagazan, A. Le Corre
{"title":"1540 to 1645 nm continuous VCSEL emission based on quantum dashes","authors":"C. Paranthoen, C. Levallois, J. Gauthier, F. Taleb, N. Chevalier, M. Perrin, Y. Léger, O. de Sagazan, A. Le Corre","doi":"10.1109/ICIPRM.2013.6562594","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562594","url":null,"abstract":"We report on an optically excited InAs quantum dash vertical cavity surface emitting lasers (VCSEL) on InP substrate. By introducing a wedge microcavity design, we obtain a spatial dependence of the resonant wavelength along the wafer, enabling us to monitor the gain material bandwidth. In this paper we show a continuously variable VCSEL emission from 1645 down to 1540 nm all across the wafer, a consequence of the important and wide gain afforded by the use of optimized quantum dashes.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116137090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
InP-based compact reflection-type transversal filter 基于inp的紧凑反射型横向滤波器
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562627
Y. Ueda, T. Fujisawa, K. Takahata, M. Kohtoku, H. Takahashi, H. Ishii
{"title":"InP-based compact reflection-type transversal filter","authors":"Y. Ueda, T. Fujisawa, K. Takahata, M. Kohtoku, H. Takahashi, H. Ishii","doi":"10.1109/ICIPRM.2013.6562627","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562627","url":null,"abstract":"We developed a reflection-type 4x1 transversal filter (TF) on an InP substrate as a compact and low-loss wavelength multiplexer (MUX) for monolithically integrated light source arrays. The filter has a satisfactory MUX function and is very compact of about 900 Pm x 50 Pm which is one twentieth of a size of a conventional 4x1 TF. It is suitable for a MUX of a monolithically integrated light source array thanks to its compactness and input/output-port arrangement.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116678112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Carrier-transport, optical and structural properties of large area ELOG InP on Si using conventional optical lithography 采用常规光刻技术制备大面积ELOG InP的载流子输运、光学和结构特性
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562592
H. Kataria, W. Metaferia, M. Nagarajan, C. Junesand, Y. Sun, S. Lourdudoss
{"title":"Carrier-transport, optical and structural properties of large area ELOG InP on Si using conventional optical lithography","authors":"H. Kataria, W. Metaferia, M. Nagarajan, C. Junesand, Y. Sun, S. Lourdudoss","doi":"10.1109/ICIPRM.2013.6562592","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562592","url":null,"abstract":"We present the carrier-transport, optical and structural properties of InP deposited on Si by Epitaxial Lateral Overgrowth (ELOG) in a Low Pressure-Hydride Vapor phase epitaxy (LP-HVPE). Hall measurements, micro photoluminescence (μ-PL) and X-ray diffraction (XRD) were used to study the above-mentioned respective properties at room temperature. It is the first time that electrical properties of ELOG InP on Si are studied by Hall measurements. Prior to ELOG, etching of patterned silicon dioxide (SiO2) mask leading to a high aspect ratio, i. e. mask thickness to opening width >2 was optimized to eliminate defect propagation even above the opening. Dense high aspect ratio structures were fabricated in SiO2 to obtain ELOG InP on Si, coalesced over large area, making it feasible to perform Hall measurements. We examine this method and study Hall mobility, strain and optical quality of large area ELOG InP on Si.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115320161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Sub-50nm indium phosphide high electron mobility transistor technology for terahertz monolithic microwave integrated circuits and systems 用于太赫兹单片微波集成电路和系统的亚50nm磷化铟高电子迁移率晶体管技术
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562646
S. Sarkozy, X. Mei, W. Yoshida, Po-Hsin Liu, L. Lee, Joe X. Zhou, K. Leong, V. Radisic, W. Deal, R. Lai
{"title":"Sub-50nm indium phosphide high electron mobility transistor technology for terahertz monolithic microwave integrated circuits and systems","authors":"S. Sarkozy, X. Mei, W. Yoshida, Po-Hsin Liu, L. Lee, Joe X. Zhou, K. Leong, V. Radisic, W. Deal, R. Lai","doi":"10.1109/ICIPRM.2013.6562646","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562646","url":null,"abstract":"This paper reports on the process and technology of the sub-50nm InP HEMT MMIC process which has enabled signal amplification up to 670 GHz. In particular, considerations not commonly addressed such as the related processing requirements and uniformity of transistors to establish working chipsets are discussed. Finally, initial burn in data is presented as the technology evolves from a research and development process to production.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125384497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信