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Analysis on channel thickness fluctuation scattering in InGaAs-OI MOSFETs InGaAs-OI mosfet沟道厚度波动散射分析
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562632
S. H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, S. Takagi
{"title":"Analysis on channel thickness fluctuation scattering in InGaAs-OI MOSFETs","authors":"S. H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, S. Takagi","doi":"10.1109/ICIPRM.2013.6562632","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562632","url":null,"abstract":"Effects of channel-thickness-fluctuation scattering on electron mobility have been analyzed and it was found that channel-thickness-fluctuation scattering is important parameters decide mobility in ETB III-V-OI MOSFETs. Also, we have clarified that the introduction of MOS interface buffer layer is effective to enhance mobility through the increase of μfluctuation.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125480221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High performance modulation doped AlGaAs/InGaAs thermopiles (H-PILEs) for uncooled IR FPA utilizing integrated HEMT-MEMS technology 采用集成HEMT-MEMS技术的高性能调制掺杂AlGaAs/InGaAs热电堆(H-PILEs)用于非制冷红外FPA
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562643
M. Abe, K. Ang, R. Hofstetter, Hong Wang, G. Ng
{"title":"High performance modulation doped AlGaAs/InGaAs thermopiles (H-PILEs) for uncooled IR FPA utilizing integrated HEMT-MEMS technology","authors":"M. Abe, K. Ang, R. Hofstetter, Hong Wang, G. Ng","doi":"10.1109/ICIPRM.2013.6562643","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562643","url":null,"abstract":"Novel thermopile based on modulation doped AlGaAs/InGaAs heterostructures is proposed and developed for uncooled infrared FPA (Focal Plane Array) image sensor application. The high sensitivity performance is designed to be the responsivity R of 33,000 V/W with the response time IJ of 8 ms, and the high speed performance is designed to be R of 4,900 V/W with IJ of 110 μs, under the 2 μm design rule. Based on integrated HEMT-MEMS technology, the 32×32 matrix FPA is fabricated to demonstrate its enhanced performances by black body measurement. The technology presented here demonstrates the potential of this approach for low-cost uncooled infrared FPA application.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121043781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 1×4 MMI-integrated high-power waveguide photodetector 一种1×4微型集成高功率波导光电探测器
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562571
E. Rouvalis, P. Muller, D. Trommer, J. Stephan, A. Steffan, G. Unterborsch
{"title":"A 1×4 MMI-integrated high-power waveguide photodetector","authors":"E. Rouvalis, P. Muller, D. Trommer, J. Stephan, A. Steffan, G. Unterborsch","doi":"10.1109/ICIPRM.2013.6562571","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562571","url":null,"abstract":"We report on the design, packaging and experimental characterization of a waveguide photodetector monolithically integrated with a 1×4 MMI coupler and a vertically-tapered spotsize converter. The total device consists of an array of 4 photodiodes connected in parallel in order to increase the saturation current. A 3-dB bandwidth of up to 30 GHz was measured. High output power was achieved with approximately 10 dBm at 10 GHz and 7.5 dBm at 20 GHz. From 1-dB compression measurements at 10 GHz and 2 0 GHz, a saturation photocurrent as high as 40 mA was found. At 10 GHz and 20 GHz a third order intercept point (OIP3) of over 20 dBm was measured for photocurrent levels up to 35 mA.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131560524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Bandgap wavelength shift in quantum well intermixing using different SiO2 masks for photonic integration 利用不同SiO2掩模进行光子集成的量子阱混合中的带隙波长位移
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562591
Jieun Lee, Y. Yamahara, M. Futami, T. Shindo, T. Amemiya, N. Nishiyama, S. Arai
{"title":"Bandgap wavelength shift in quantum well intermixing using different SiO2 masks for photonic integration","authors":"Jieun Lee, Y. Yamahara, M. Futami, T. Shindo, T. Amemiya, N. Nishiyama, S. Arai","doi":"10.1109/ICIPRM.2013.6562591","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562591","url":null,"abstract":"As a photonic integration method of semiconductor membrane structure, quantum-well-intermixing (QWI) process using O<sub>2</sub>-sputtered SiO<sub>2</sub> mask was investigated by comparing the photoluminescence peak wavelength shift between two sections with/without the SiO<sub>2</sub> mask. As the result, a large bandgap wavelength difference of 80 nm (47 meV) was obtained while quite large transient region (90 μm) was observed. Since this fact was considered to be attributed to the temperature gradient along the masked and window regions during the rapid thermal annealing (RTA) process, we deposited CVD SiO<sub>2</sub> (which has smaller vacancies than O<sub>2</sub>-sputtered SiO<sub>2</sub> hence the bandgap wavelength shift is smaller) on the entire surface after forming O<sub>2</sub>-sputtered SiO<sub>2</sub> mask pattern and successfully reduced the transient region length to less than 5 μm.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115359047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Single-photon emission in telecommunication band from an InAs quantum dot in a pillar structure 柱状结构中InAs量子点在电信波段的单光子发射
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562567
X. Liu, N. Kobayashi, K. Akahane, M. Sasaki, H. Kumano, I. Suemune
{"title":"Single-photon emission in telecommunication band from an InAs quantum dot in a pillar structure","authors":"X. Liu, N. Kobayashi, K. Akahane, M. Sasaki, H. Kumano, I. Suemune","doi":"10.1109/ICIPRM.2013.6562567","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562567","url":null,"abstract":"We report on the experimental demonstration of single-photon source based on a single InAs quantum dot emitting in the telecommunication band. The low-density quantum dots grown by epitaxial method are embedded in an asetched pillar structure. Photoluminescence spectrum of a single InAs quantum dot exhibits intense and narrow emission lines. Photon antibunching behavior is clearly observed using superconducting single-photon detectors with high sensitivity, which indicates the single-photon emission.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115930173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
1540 to 1645 nm continuous VCSEL emission based on quantum dashes 基于量子破折号的1540 ~ 1645 nm连续VCSEL发射
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562594
C. Paranthoen, C. Levallois, J. Gauthier, F. Taleb, N. Chevalier, M. Perrin, Y. Léger, O. de Sagazan, A. Le Corre
{"title":"1540 to 1645 nm continuous VCSEL emission based on quantum dashes","authors":"C. Paranthoen, C. Levallois, J. Gauthier, F. Taleb, N. Chevalier, M. Perrin, Y. Léger, O. de Sagazan, A. Le Corre","doi":"10.1109/ICIPRM.2013.6562594","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562594","url":null,"abstract":"We report on an optically excited InAs quantum dash vertical cavity surface emitting lasers (VCSEL) on InP substrate. By introducing a wedge microcavity design, we obtain a spatial dependence of the resonant wavelength along the wafer, enabling us to monitor the gain material bandwidth. In this paper we show a continuously variable VCSEL emission from 1645 down to 1540 nm all across the wafer, a consequence of the important and wide gain afforded by the use of optimized quantum dashes.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116137090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Carrier-transport, optical and structural properties of large area ELOG InP on Si using conventional optical lithography 采用常规光刻技术制备大面积ELOG InP的载流子输运、光学和结构特性
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562592
H. Kataria, W. Metaferia, M. Nagarajan, C. Junesand, Y. Sun, S. Lourdudoss
{"title":"Carrier-transport, optical and structural properties of large area ELOG InP on Si using conventional optical lithography","authors":"H. Kataria, W. Metaferia, M. Nagarajan, C. Junesand, Y. Sun, S. Lourdudoss","doi":"10.1109/ICIPRM.2013.6562592","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562592","url":null,"abstract":"We present the carrier-transport, optical and structural properties of InP deposited on Si by Epitaxial Lateral Overgrowth (ELOG) in a Low Pressure-Hydride Vapor phase epitaxy (LP-HVPE). Hall measurements, micro photoluminescence (μ-PL) and X-ray diffraction (XRD) were used to study the above-mentioned respective properties at room temperature. It is the first time that electrical properties of ELOG InP on Si are studied by Hall measurements. Prior to ELOG, etching of patterned silicon dioxide (SiO2) mask leading to a high aspect ratio, i. e. mask thickness to opening width >2 was optimized to eliminate defect propagation even above the opening. Dense high aspect ratio structures were fabricated in SiO2 to obtain ELOG InP on Si, coalesced over large area, making it feasible to perform Hall measurements. We examine this method and study Hall mobility, strain and optical quality of large area ELOG InP on Si.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115320161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
AlGaInAs selective area growth for high-speed EAM-based PIC sources 高速eam型PIC源的AlGaInAs选择性面积生长
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562625
J. Decobert, P. Lagrée, H. Guerault, C. Kazmierski
{"title":"AlGaInAs selective area growth for high-speed EAM-based PIC sources","authors":"J. Decobert, P. Lagrée, H. Guerault, C. Kazmierski","doi":"10.1109/ICIPRM.2013.6562625","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562625","url":null,"abstract":"We present a generic integration platform based on the SAG of AlGaInAs/InP MQW material. For efficient bandgap engineering of the different areas of the PICs, active and passive function heterostructures are precisely modeled and characterized in the SAG zones. This approach has allowed to design novel high-speed InP-based PIC.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124449389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Selective area MOVPE of InGaAsP and InGaN systems as process analytical and design tools for OEICs InGaAsP和InGaN系统作为OEICs的工艺分析和设计工具的选择性区域MOVPE
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562576
Y. Shimogaki, M. Sugiyama, Y. Nakano
{"title":"Selective area MOVPE of InGaAsP and InGaN systems as process analytical and design tools for OEICs","authors":"Y. Shimogaki, M. Sugiyama, Y. Nakano","doi":"10.1109/ICIPRM.2013.6562576","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562576","url":null,"abstract":"Numerical simulation on growth rate non-uniformity of selective area growth (SAG) in metal-organic vapor phase epitaxy (MOVPE) is an effective method to examine the surface reaction kinetics, which is normally hindered by mass transport rate of precursors. SAG is also an effective tool to fabricate opto-electronic integrated circuits (OEICs) to reduce the process steps. In the present talk, the kinetic analyses on InGaAsP and InGaN MOVPE processes using SAG will be presented.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123678649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Design of multi-functional GaInAsP/Si hybrid semiconductor optical amplifier array with AlInAs-oxide current confinement layer 具有AlInAs-oxide电流约束层的多功能GaInAsP/Si混合半导体光放大器阵列设计
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562621
Y. Hayashi, K. Fukuda, R. Osabe, Jun-ichi Suzuki, Y. Atsumi, Joonhyun Kang, N. Nishiyama, S. Arai
{"title":"Design of multi-functional GaInAsP/Si hybrid semiconductor optical amplifier array with AlInAs-oxide current confinement layer","authors":"Y. Hayashi, K. Fukuda, R. Osabe, Jun-ichi Suzuki, Y. Atsumi, Joonhyun Kang, N. Nishiyama, S. Arai","doi":"10.1109/ICIPRM.2013.6562621","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562621","url":null,"abstract":"Novel configuration of multi-functional SOA array by III-V/Si hybrid technique using one-time III-V/Si wafer bonding is proposed. A III-V/Si hybrid structure can realize multi-functional SOA array with different gain characteristics by tuning Si waveguide width.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122885042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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