(in,Ga)As(N)/GaP量子点(QDs)的光学跃迁性质:QD尺寸、铟组成和氮掺入的影响

2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI:10.1109/ICIPRM.2013.6562587

C. Robert, C. Cornet, K. Pereira da Silva, P. Turban, S. Mauger, T. Nguyen Thanh, J. Even, J. Jancu, M. Perrin, H. Folliot, T. Rohel, S. Tricot, A. Balocchi, P. Barate, X. Marie, P. Koenraad, M. Alonso, A. Goi, N. Bertru, O. Durand, A. Le Corre

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摘要

采用平面观察和交叉扫描隧道显微镜研究了(In,Ga)As/GaP量子点的结构特性。时间分辨和压力相关的光致发光实验显示了间接型的地面光学跃迁。混合kp /紧密结合模拟表明，根据铟含量和量子点大小，可能存在间接或直接交叉。最后显示了氮在量子点中的掺入。

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Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): Effect of QD size, indium composition and nitrogen incorporation

The structural properties of (In,Ga)As/GaP quantum dots (QDs) are studied by plane view and cross scanning tunneling microscopy. Time-resolved and pressure dependent photoluminescence experiments show a ground optical transition of indirect type. Mixed k.p/tight-binding simulations indicate a possible indirect to direct crossover depending on indium content and QD size. The incorporation of nitrogen in QDs is finally shown.

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2013 International Conference on Indium Phosphide and Related Materials (IPRM)

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