具有AlInAs-oxide电流约束层的多功能GaInAsP/Si混合半导体光放大器阵列设计

2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI:10.1109/ICIPRM.2013.6562621

Y. Hayashi, K. Fukuda, R. Osabe, Jun-ichi Suzuki, Y. Atsumi, Joonhyun Kang, N. Nishiyama, S. Arai

{"title":"具有AlInAs-oxide电流约束层的多功能GaInAsP/Si混合半导体光放大器阵列设计","authors":"Y. Hayashi, K. Fukuda, R. Osabe, Jun-ichi Suzuki, Y. Atsumi, Joonhyun Kang, N. Nishiyama, S. Arai","doi":"10.1109/ICIPRM.2013.6562621","DOIUrl":null,"url":null,"abstract":"Novel configuration of multi-functional SOA array by III-V/Si hybrid technique using one-time III-V/Si wafer bonding is proposed. A III-V/Si hybrid structure can realize multi-functional SOA array with different gain characteristics by tuning Si waveguide width.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design of multi-functional GaInAsP/Si hybrid semiconductor optical amplifier array with AlInAs-oxide current confinement layer\",\"authors\":\"Y. Hayashi, K. Fukuda, R. Osabe, Jun-ichi Suzuki, Y. Atsumi, Joonhyun Kang, N. Nishiyama, S. Arai\",\"doi\":\"10.1109/ICIPRM.2013.6562621\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Novel configuration of multi-functional SOA array by III-V/Si hybrid technique using one-time III-V/Si wafer bonding is proposed. A III-V/Si hybrid structure can realize multi-functional SOA array with different gain characteristics by tuning Si waveguide width.\",\"PeriodicalId\":120297,\"journal\":{\"name\":\"2013 International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-05-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2013.6562621\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2013.6562621","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

提出了一种基于III-V/Si晶圆键合的III-V/Si混合技术的多功能SOA阵列结构。III-V/Si混合结构可以通过调整Si波导宽度来实现具有不同增益特性的多功能SOA阵列。

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Design of multi-functional GaInAsP/Si hybrid semiconductor optical amplifier array with AlInAs-oxide current confinement layer

Novel configuration of multi-functional SOA array by III-V/Si hybrid technique using one-time III-V/Si wafer bonding is proposed. A III-V/Si hybrid structure can realize multi-functional SOA array with different gain characteristics by tuning Si waveguide width.

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2013 International Conference on Indium Phosphide and Related Materials (IPRM)

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