H. Kataria, W. Metaferia, M. Nagarajan, C. Junesand, Y. Sun, S. Lourdudoss
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引用次数: 1
摘要
本文研究了在低压氢化物气相外延(LP-HVPE)中通过外延横向过度生长(ELOG)沉积在Si上的InP的载流子输运、光学和结构性质。采用霍尔测量、微光致发光(μ-PL)和x射线衍射(XRD)等方法研究了上述材料在室温下的性能。这是首次用霍尔测量方法研究了ELOG InP在Si上的电学性质。在ELOG之前，对图案二氧化硅(SiO2)掩模的蚀刻进行了优化，导致高长宽比，即掩模厚度与开口宽度>2，以消除甚至在开口以上的缺陷传播。在SiO2上制备致密的高纵横比结构，得到大面积聚结的ELOG InP on Si，使霍尔测量成为可能。我们检验了这种方法，并研究了大面积ELOG InP的霍尔迁移率、应变和光学质量。
Carrier-transport, optical and structural properties of large area ELOG InP on Si using conventional optical lithography
We present the carrier-transport, optical and structural properties of InP deposited on Si by Epitaxial Lateral Overgrowth (ELOG) in a Low Pressure-Hydride Vapor phase epitaxy (LP-HVPE). Hall measurements, micro photoluminescence (μ-PL) and X-ray diffraction (XRD) were used to study the above-mentioned respective properties at room temperature. It is the first time that electrical properties of ELOG InP on Si are studied by Hall measurements. Prior to ELOG, etching of patterned silicon dioxide (SiO2) mask leading to a high aspect ratio, i. e. mask thickness to opening width >2 was optimized to eliminate defect propagation even above the opening. Dense high aspect ratio structures were fabricated in SiO2 to obtain ELOG InP on Si, coalesced over large area, making it feasible to perform Hall measurements. We examine this method and study Hall mobility, strain and optical quality of large area ELOG InP on Si.
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