S. Sarkozy, X. Mei, W. Yoshida, Po-Hsin Liu, L. Lee, Joe X. Zhou, K. Leong, V. Radisic, W. Deal, R. Lai
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Sub-50nm indium phosphide high electron mobility transistor technology for terahertz monolithic microwave integrated circuits and systems
This paper reports on the process and technology of the sub-50nm InP HEMT MMIC process which has enabled signal amplification up to 670 GHz. In particular, considerations not commonly addressed such as the related processing requirements and uniformity of transistors to establish working chipsets are discussed. Finally, initial burn in data is presented as the technology evolves from a research and development process to production.
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