C. Paranthoen, C. Levallois, J. Gauthier, F. Taleb, N. Chevalier, M. Perrin, Y. Léger, O. de Sagazan, A. Le Corre
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1540 to 1645 nm continuous VCSEL emission based on quantum dashes
We report on an optically excited InAs quantum dash vertical cavity surface emitting lasers (VCSEL) on InP substrate. By introducing a wedge microcavity design, we obtain a spatial dependence of the resonant wavelength along the wafer, enabling us to monitor the gain material bandwidth. In this paper we show a continuously variable VCSEL emission from 1645 down to 1540 nm all across the wafer, a consequence of the important and wide gain afforded by the use of optimized quantum dashes.
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