High performance modulation doped AlGaAs/InGaAs thermopiles (H-PILEs) for uncooled IR FPA utilizing integrated HEMT-MEMS technology

Abstract

Novel thermopile based on modulation doped AlGaAs/InGaAs heterostructures is proposed and developed for uncooled infrared FPA (Focal Plane Array) image sensor application. The high sensitivity performance is designed to be the responsivity R of 33,000 V/W with the response time IJ of 8 ms, and the high speed performance is designed to be R of 4,900 V/W with IJ of 110 μs, under the 2 μm design rule. Based on integrated HEMT-MEMS technology, the 32×32 matrix FPA is fabricated to demonstrate its enhanced performances by black body measurement. The technology presented here demonstrates the potential of this approach for low-cost uncooled infrared FPA application.