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2013 International Conference on Indium Phosphide and Related Materials (IPRM)最新文献

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Cryogenic ultra-low noise amplification - InP PHEMT vs. GaAs MHEMT 低温超低噪声放大- InP PHEMT与GaAs MHEMT
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562600
J. Schleeh, H. Rodilla, N. Wadefalk, P. Nilsson, J. Grahn
{"title":"Cryogenic ultra-low noise amplification - InP PHEMT vs. GaAs MHEMT","authors":"J. Schleeh, H. Rodilla, N. Wadefalk, P. Nilsson, J. Grahn","doi":"10.1109/ICIPRM.2013.6562600","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562600","url":null,"abstract":"We present a comparative study of 130 nm high electron mobility transistors (HEMTs) fabricated on pseudomorphic InGaAs/InAlAs/InP (InP PHEMT) and InGaAs/InAlAs/GaAs (GaAs MHEMT) intended for ultra-low noise amplifiers (LNAs). The epitaxial growth, as well as the HEMT process, was performed simultaneously. When integrated in a 4-8 GHz 3-stage LNA at 300 K, the measured average noise temperature was 34 K for the GaAs MHEMT and 27 K for the InP PHEMT. When cooled down to 10 K, the InP PHEMT LNA was improved to 1.6 K, while the GaAs MHEMT LNA was only reduced to 5 K. The reason for the superior cryogenic noise performance of the InP PHEMT compared to the GaAs MHEMT in this study, was found to be a higher quality of pinch-off when cooled down.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130388380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
MOVPE-preparation of Si(111) surfaces for III–V nanowire growth 用于III-V纳米线生长的Si(111)表面的movpe制备
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562590
M. Steidl, A. Paszuk, Weihong Zhao, S. Bruckner, A. Dobrich, O. Supplie, Johannes Luczak, P. Kleinschmidt, H. Doscher, T. Hannappel
{"title":"MOVPE-preparation of Si(111) surfaces for III–V nanowire growth","authors":"M. Steidl, A. Paszuk, Weihong Zhao, S. Bruckner, A. Dobrich, O. Supplie, Johannes Luczak, P. Kleinschmidt, H. Doscher, T. Hannappel","doi":"10.1109/ICIPRM.2013.6562590","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562590","url":null,"abstract":"We studied the preparation of the clean Si(111) surface in H2 ambient with in situ reflection anisotropy spectroscopy and UHV-based surface science tools after contamination-free transfer. X-ray photoelectron spectroscopy confirmed complete oxide removal after high-temperature annealing. In situ RAS enabled observation of the oxide removal in dependence of process temperature. Monohydride termination was verified by Fourier transform infrared spectroscopy which agrees with a (1×1) surface reconstruction we observed by scanning tunneling microscopy and low energy electron diffraction. By atomic force microscopy analysis of the morphology, we found that wet-chemical pretreatment has an impact on the different silicon surfaces we have prepared, including homoepitaxy and termination of silicon with arsenic.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132145818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Terahertz GaAs Schottky diode mixer and multiplier MIC's based on e-beam technology 基于电子束技术的太赫兹GaAs肖特基二极管混频器和乘法器
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562606
V. Drakinskiy, P. Sobis, H. Zhao, T. Bryllert, J. Stake
{"title":"Terahertz GaAs Schottky diode mixer and multiplier MIC's based on e-beam technology","authors":"V. Drakinskiy, P. Sobis, H. Zhao, T. Bryllert, J. Stake","doi":"10.1109/ICIPRM.2013.6562606","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562606","url":null,"abstract":"We present the progress of the technological development of a full e-beam based monolithically integrated Schottky diode process applicable for sub-millimetre wave multipliers and mixers. Evaluation of the process has been done in a number of demonstrators showing state-of-the-art performance, including various multiplier circuits up to 200 GHz with a measured flange efficiency of above 35%, as well as heterodyne receiver front-end modules operating at 340 GHz and 557 GHz with a measured receiver DSB noise temperature of below 700 K and 1300 K respectively.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132484389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
Optimizing the double-cap procedure for InAs/InGaAsP/InP quantum dots by metal-organic chemical vapor deposition 金属有机化学气相沉积法制备InAs/InGaAsP/InP量子点的双帽工艺优化
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562588
S. Luo, H. Ji, Xiaoguang Yang, Tao Yang
{"title":"Optimizing the double-cap procedure for InAs/InGaAsP/InP quantum dots by metal-organic chemical vapor deposition","authors":"S. Luo, H. Ji, Xiaoguang Yang, Tao Yang","doi":"10.1109/ICIPRM.2013.6562588","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562588","url":null,"abstract":"We report the optimization of the double-cap (DC) procedure for InAs/InGaAsP/InP quantum dots (QD) grown by metal-organic chemical vapor deposition. By using a combination of optimized thickness of the first cap layer and elevated growth temperature for the second cap layer, the photoluminescence (PL) linewidth of samples with five QD layers is significantly reduced from 124 meV to 87 meV at room temperature. Furthermore, the uniformity of the PL peak intensity and peak energy on the wafer surface is evidently improved. This distribution improvement is especially beneficial for improving device yield per wafer in device fabrication.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127255581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low crosstalk and high modulation bandwidth 100GbE optical transmitter using flip-chip interconnects 使用倒装芯片互连的低串扰和高调制带宽100GbE光发射机
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI: 10.1109/ICIPRM.2013.6562619
S. Kanazawa, T. Fujisawa, K. Takahata, A. Ohki, R. Iga, H. Ishii
{"title":"Low crosstalk and high modulation bandwidth 100GbE optical transmitter using flip-chip interconnects","authors":"S. Kanazawa, T. Fujisawa, K. Takahata, A. Ohki, R. Iga, H. Ishii","doi":"10.1109/ICIPRM.2013.6562619","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562619","url":null,"abstract":"We developed the first compact 100GbE optical transmitter to use flip-chip interconnects for the first time. The flip-chip interconnects provide low crosstalk and a high modulation bandwidth. Under four-channel simultaneous operation, the 100GBASE-LR4 mask margin of the flip-chip interconnection module was improved by 10% to 27% compared with that of a wire interconnection module.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125280833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Monolithic integration of InP-based waveguide photodiodes with MIM capacitors for compact coherent receiver 紧凑相干接收机用inp波导光电二极管与MIM电容的单片集成
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-02-13 DOI: 10.1109/ICIPRM.2013.6562573
R. Masuyama, H. Yagi, N. Inoue, Y. Onishi, T. Katsuyama, T. Kikuchi, Y. Yoneda, H. Shoji
{"title":"Monolithic integration of InP-based waveguide photodiodes with MIM capacitors for compact coherent receiver","authors":"R. Masuyama, H. Yagi, N. Inoue, Y. Onishi, T. Katsuyama, T. Kikuchi, Y. Yoneda, H. Shoji","doi":"10.1109/ICIPRM.2013.6562573","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562573","url":null,"abstract":"We have demonstrated monolithic integration of InP-based waveguide photodiodes (WGPDs) with metal-insulator-metal (MIM) capacitors using the 3-inch diameter wafer process. The uniformity of MIM capacitance and the dielectric breakdown voltage of the capacitor obtained within +/-2 % and over 100 V, respectively. The dark current of WGPDs was less than 3 nA at a reverse voltage of 1.6 V, owing to the InP passivation structure formed on WGPD surface. The fabricated integrated chip size was 2.0 mm × 5.1 mm. These results indicate that integrated WGPDs can provide both smaller and easier assembly for the compact coherent receiver.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123258361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Non-blocking 4×4 InAlGaAs/InAlAs Mach-Zehnder-type optical switch fabric 无阻塞4×4 InAlGaAs/InAlAs mach - zehnder型光交换结构
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-02-13 DOI: 10.1109/ICIPRM.2013.6562620
N. Koyama, H. Kouketsu, S. Kawasaki, A. Takei, T. Taniguchi, Y. Matsushima, K. Utaka
{"title":"Non-blocking 4×4 InAlGaAs/InAlAs Mach-Zehnder-type optical switch fabric","authors":"N. Koyama, H. Kouketsu, S. Kawasaki, A. Takei, T. Taniguchi, Y. Matsushima, K. Utaka","doi":"10.1109/ICIPRM.2013.6562620","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562620","url":null,"abstract":"We demonstrated the full-interport connection of a non-blocking 4x4 InAlGaAs/InAlAs Mach-Zehnder-type optical switch (MZ-OS) fabric. This switch fabric is consisted of six 2x2 MZ-OS elements in a cascading configuration, and it successfully operated with high-extinction ratios of about 20dB and polarization independence.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115424002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Analysis of photoluminescent properties of InAs/InGaAsP/InP quantum dots structure InAs/InGaAsP/InP量子点结构的光致发光特性分析
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-02-13 DOI: 10.1109/ICIPRM.2013.6562586
R. Sato, M. Nakamura, H. Imai
{"title":"Analysis of photoluminescent properties of InAs/InGaAsP/InP quantum dots structure","authors":"R. Sato, M. Nakamura, H. Imai","doi":"10.1109/ICIPRM.2013.6562586","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562586","url":null,"abstract":"We measured photoluminescence (PL) spectra of InAs/InGaAsP/InP quantum dots structures. We examined the PL peak shift changing the polarization of excitation light from p-polarization to s-polarization and the excitation light power. From the results, we estimated that the phonon emission according to the increase in TM component of the p-polarization.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131641280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Terahertz oscillators using resonant tunneling diodes with InAlGaAs/InP composite collector 采用谐振隧道二极管和InAlGaAs/InP复合集电极的太赫兹振荡器
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-02-13 DOI: 10.1109/ICIPRM.2013.6562603
R. Sogabe, K. Shizuno, H. Kanaya, S. Suzuki, M. Asada, H. Sugiyama, H. Yokoyama
{"title":"Terahertz oscillators using resonant tunneling diodes with InAlGaAs/InP composite collector","authors":"R. Sogabe, K. Shizuno, H. Kanaya, S. Suzuki, M. Asada, H. Sugiyama, H. Yokoyama","doi":"10.1109/ICIPRM.2013.6562603","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562603","url":null,"abstract":"We proposed a resonant tunneling diode (RTD) with InAlGaAs/InP composite collector for reduction in transit delay caused by the gamma to L valley transition at the collector depletion region. Terahertz oscillators fabricated with this RTD show room-temperature fundamental oscillations of 680-770 GHz with the RTD areas of 1-1.5 square microns. Higher frequency will be possible by reducing the RTD area.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126483905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Asymmetric dual-grating gate InGaAs/InAlAs/InP HEMTs for ultrafast and ultrahigh sensitive terahertz detection 用于超快和超高灵敏度太赫兹探测的非对称双光栅栅极InGaAs/InAlAs/InP hemt
2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6256927
T. Otsuji, Takayuki Watanabe, S. Boubanga-Tombet, T. Suemitsu, D. Coquillat, W. Knap, D. Fateev, V. Popov
{"title":"Asymmetric dual-grating gate InGaAs/InAlAs/InP HEMTs for ultrafast and ultrahigh sensitive terahertz detection","authors":"T. Otsuji, Takayuki Watanabe, S. Boubanga-Tombet, T. Suemitsu, D. Coquillat, W. Knap, D. Fateev, V. Popov","doi":"10.1109/DRC.2012.6256927","DOIUrl":"https://doi.org/10.1109/DRC.2012.6256927","url":null,"abstract":"This paper reviews recent advances in ultrafast and ultrahigh sensitive broadband terahertz detection utilizsing asymmetric double-grating-gate InP-based high-electron-mobility transistors, demonstrating a record responsivity of 2.2 kV/W at 1 THz under drain-unbiased conditions with a superior low noise equivalent power of 15 pW/√Hz and 6.4 kV/W even at 1.5 THz under drain-biased conditions.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133207959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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