InAs/InGaAsP/InP量子点结构的光致发光特性分析

2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-02-13 DOI:10.1109/ICIPRM.2013.6562586

R. Sato, M. Nakamura, H. Imai

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引用次数: 0

摘要

我们测量了InAs/InGaAsP/InP量子点结构的光致发光光谱。我们研究了激发光的偏振从p偏振到s偏振以及激发光功率的变化。根据实验结果，我们估计声子发射随p极化TM分量的增加而增加。

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Analysis of photoluminescent properties of InAs/InGaAsP/InP quantum dots structure

We measured photoluminescence (PL) spectra of InAs/InGaAsP/InP quantum dots structures. We examined the PL peak shift changing the polarization of excitation light from p-polarization to s-polarization and the excitation light power. From the results, we estimated that the phonon emission according to the increase in TM component of the p-polarization.

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2013 International Conference on Indium Phosphide and Related Materials (IPRM)

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