基于电子束技术的太赫兹GaAs肖特基二极管混频器和乘法器

V. Drakinskiy, P. Sobis, H. Zhao, T. Bryllert, J. Stake
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引用次数: 22

摘要

本文介绍了应用于亚毫米波乘法器和混频器的全电子束单片集成肖特基二极管工艺的技术进展。对该工艺的评估已经在许多演示中完成,显示了最先进的性能,包括高达200 GHz的各种倍频电路,测量的法兰盘效率超过35%,以及工作在340 GHz和557 GHz的外差接收器前端模块,测量的接收器DSB噪声温度分别低于700 K和1300 K。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Terahertz GaAs Schottky diode mixer and multiplier MIC's based on e-beam technology
We present the progress of the technological development of a full e-beam based monolithically integrated Schottky diode process applicable for sub-millimetre wave multipliers and mixers. Evaluation of the process has been done in a number of demonstrators showing state-of-the-art performance, including various multiplier circuits up to 200 GHz with a measured flange efficiency of above 35%, as well as heterodyne receiver front-end modules operating at 340 GHz and 557 GHz with a measured receiver DSB noise temperature of below 700 K and 1300 K respectively.
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