J. Schleeh, H. Rodilla, N. Wadefalk, P. Nilsson, J. Grahn
{"title":"低温超低噪声放大- InP PHEMT与GaAs MHEMT","authors":"J. Schleeh, H. Rodilla, N. Wadefalk, P. Nilsson, J. Grahn","doi":"10.1109/ICIPRM.2013.6562600","DOIUrl":null,"url":null,"abstract":"We present a comparative study of 130 nm high electron mobility transistors (HEMTs) fabricated on pseudomorphic InGaAs/InAlAs/InP (InP PHEMT) and InGaAs/InAlAs/GaAs (GaAs MHEMT) intended for ultra-low noise amplifiers (LNAs). The epitaxial growth, as well as the HEMT process, was performed simultaneously. When integrated in a 4-8 GHz 3-stage LNA at 300 K, the measured average noise temperature was 34 K for the GaAs MHEMT and 27 K for the InP PHEMT. When cooled down to 10 K, the InP PHEMT LNA was improved to 1.6 K, while the GaAs MHEMT LNA was only reduced to 5 K. The reason for the superior cryogenic noise performance of the InP PHEMT compared to the GaAs MHEMT in this study, was found to be a higher quality of pinch-off when cooled down.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Cryogenic ultra-low noise amplification - InP PHEMT vs. GaAs MHEMT\",\"authors\":\"J. Schleeh, H. Rodilla, N. Wadefalk, P. Nilsson, J. Grahn\",\"doi\":\"10.1109/ICIPRM.2013.6562600\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a comparative study of 130 nm high electron mobility transistors (HEMTs) fabricated on pseudomorphic InGaAs/InAlAs/InP (InP PHEMT) and InGaAs/InAlAs/GaAs (GaAs MHEMT) intended for ultra-low noise amplifiers (LNAs). The epitaxial growth, as well as the HEMT process, was performed simultaneously. When integrated in a 4-8 GHz 3-stage LNA at 300 K, the measured average noise temperature was 34 K for the GaAs MHEMT and 27 K for the InP PHEMT. When cooled down to 10 K, the InP PHEMT LNA was improved to 1.6 K, while the GaAs MHEMT LNA was only reduced to 5 K. The reason for the superior cryogenic noise performance of the InP PHEMT compared to the GaAs MHEMT in this study, was found to be a higher quality of pinch-off when cooled down.\",\"PeriodicalId\":120297,\"journal\":{\"name\":\"2013 International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-05-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2013.6562600\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2013.6562600","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Cryogenic ultra-low noise amplification - InP PHEMT vs. GaAs MHEMT
We present a comparative study of 130 nm high electron mobility transistors (HEMTs) fabricated on pseudomorphic InGaAs/InAlAs/InP (InP PHEMT) and InGaAs/InAlAs/GaAs (GaAs MHEMT) intended for ultra-low noise amplifiers (LNAs). The epitaxial growth, as well as the HEMT process, was performed simultaneously. When integrated in a 4-8 GHz 3-stage LNA at 300 K, the measured average noise temperature was 34 K for the GaAs MHEMT and 27 K for the InP PHEMT. When cooled down to 10 K, the InP PHEMT LNA was improved to 1.6 K, while the GaAs MHEMT LNA was only reduced to 5 K. The reason for the superior cryogenic noise performance of the InP PHEMT compared to the GaAs MHEMT in this study, was found to be a higher quality of pinch-off when cooled down.
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