Asymmetric dual-grating gate InGaAs/InAlAs/InP HEMTs for ultrafast and ultrahigh sensitive terahertz detection

T. Otsuji, Takayuki Watanabe, S. Boubanga-Tombet, T. Suemitsu, D. Coquillat, W. Knap, D. Fateev, V. Popov
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引用次数: 5

Abstract

This paper reviews recent advances in ultrafast and ultrahigh sensitive broadband terahertz detection utilizsing asymmetric double-grating-gate InP-based high-electron-mobility transistors, demonstrating a record responsivity of 2.2 kV/W at 1 THz under drain-unbiased conditions with a superior low noise equivalent power of 15 pW/√Hz and 6.4 kV/W even at 1.5 THz under drain-biased conditions.
用于超快和超高灵敏度太赫兹探测的非对称双光栅栅极InGaAs/InAlAs/InP hemt
本文综述了利用非对称双栅inp基高电子迁移率晶体管在超快和超高灵敏度宽带太赫兹检测方面的最新进展,证明了在漏极偏置条件下,在1太赫兹处的响应率达到了2.2 kV/W,在漏极偏置条件下,在1.5太赫兹处的等效低噪声功率为15 pW/√Hz和6.4 kV/W。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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